Electrical Properties and Carrier Transport Mechanism of Au/&lt;i&gt;n&lt;/i&gt;-GaN Schottky Contact Modified Using a Copper Pthalocyanine (CuPc) Interlayer

Janardhanam, V.; Jyothi, I.; Lee, Ji‐Hyun; Kim, Jae-Yeon; Reddy, V. Rajagopal; Choi, Chel‐Jong

doi:10.2320/matertrans.m2013449

Cited by 13 publications

(7 citation statements)

References 44 publications

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“…The conduction mechanism in the present systems can be determined by the value of ρ 65 . If ρ = 1, the sample follows the ohmic behavior which may be attributed to the entire pinning or holes charge 66 . If ρ = 2, the prominent mechanism will be SCLC (space charge limiting current).…”

Section: Resultsmentioning

confidence: 89%

Structural, electrical, and nonlinear optical performance of PVAL embedded with Li⁺‐ions for multifunctional devices

Ali

Abdelaziz

Nawar

et al. 2020

Polymers for Advanced Techs

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In this paper, pure and 0.04%, 0.19%, 0.4%, 1.9%, and 4% LiNO3‐doped PVAL (polyvinyl alcohol) electrolyte were fabricated in the form of solid films by the casting process. The influence of Li+‐ions on PVAL was identified by some characterization tools such as X‐ray diffraction, FT‐IR (Fourier transform infrared), scanning electron microscope (SEM), thermal gravimetric analysis (TGA), UV‐visible‐NIR spectroscopy, dielectric, and conductivity measurements. X‐ray diffraction studies indicate that the semicrystalline of PVAL and the calculated crystallize size from Gaussian fitting were decreased with Li+‐ions concentration. FT‐IR results indicate that there is strong interaction among doping ions and the matrix. The surface morphology of the electrolyte films was studied via SEM. The optical studies demonstrate that the transmittance of films decreased with the rising of Li+‐ions. Urbach's energy and bandgap are also reduced with adding more ions. Different empirical equations were used to study the relation between the energy gap and the refractive index. The index of refraction of the films has average values in 2.024 to 2.078 range. Li+‐ion concentrations critically influenced the factors of nonlinearity. The calculated values of nonlinear optical susceptibility χ(3) and refractive index n2 were increased from 8.6 × 10−13 esu and 1.55 × 10−11 to 20.56 × 10−10 esu and 2.05 × 10−11, respectively. The dielectric constant and loss measurements of the PVAL embedded with 4% of LiNO3 (SPL‐5) were decreased exponentially with increasing the incident frequency. The AC electrical conductivity (σAC) and nonlinear I‐V curves are enhanced by increasing the Li+‐ion contents. The electrical current was increased with small resistivity for SPL‐5 film. The studied films have an inimitable result in various fields, such as nonlinear optical and varistor devices.

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Section: Resultsmentioning

confidence: 89%

Structural, electrical, and nonlinear optical performance of PVAL embedded with Li⁺‐ions for multifunctional devices

Ali

Abdelaziz

Nawar

et al. 2020

Polymers for Advanced Techs

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“…This behaviour is not different from the transport process of Schottky contacts to c- and a-plane GaN grown using other methods [ 17 , 18 , 37 ]. In addition, the Schottky barrier characteristics are comparable to those using the same contact material and similar diode fabrication conditions [ 38 , 39 ].…”

Section: Resultsmentioning

confidence: 92%

Electronic Transport Mechanism for Schottky Diodes Formed by Au/HVPE a-Plane GaN Templates Grown via In Situ GaN Nanodot Formation

Lee

et al. 2018

Nanomaterials

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We investigate the electrical characteristics of Schottky contacts for an Au/hydride vapor phase epitaxy (HVPE) a-plane GaN template grown via in situ GaN nanodot formation. Although the Schottky diodes present excellent rectifying characteristics, their Schottky barrier height and ideality factor are highly dependent upon temperature variation. The relationship between the barrier height, ideality factor, and conventional Richardson plot reveals that the Schottky diodes exhibit an inhomogeneous barrier height, attributed to the interface states between the metal and a-plane GaN film and to point defects within the a-plane GaN layers grown via in situ nanodot formation. Also, we confirm that the current transport mechanism of HVPE a-plane GaN Schottky diodes grown via in situ nanodot formation prefers a thermionic field emission model rather than a thermionic emission (TE) one, implying that Poole–Frenkel emission dominates the conduction mechanism over the entire range of measured temperatures. The deep-level transient spectroscopy (DLTS) results prove the presence of noninteracting point-defect-assisted tunneling, which plays an important role in the transport mechanism. These electrical characteristics indicate that this method possesses a great throughput advantage for various applications, compared with Schottky contact to a-plane GaN grown using other methods. We expect that HVPE a-plane GaN Schottky diodes supported by in situ nanodot formation will open further opportunities for the development of nonpolar GaN-based high-performance devices.

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“…These values were close to unity, indicating a linear dependence of the current as I~V. In other word, for both devices, the current transport of region-I follows the Ohm's law in which the current is controlled by the thermally activated carriers rather the injected carriers [39]. For Ti/p-type InP Schottky diode without PANI interlayer, there was an exponential increase of current in region-II and region-III with the values of m being obtained as 4.4 and 3.4 in region-II and region-III, respectively.…”

Section: Resultsmentioning

confidence: 77%

Modification of Schottky Barrier Properties of Ti/p-type InP Schottky Diode by Polyaniline (PANI) Organic Interlayer

Reddy¹,

Janardhanam²,

Jyothi³

et al. 2016

JSTS:Journal of Semiconductor Technology and Science

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Abstract-The electrical properties of Ti/p-type InPSchottky diodes with and without polyaniline (PANI) interlayer was investigated using current-voltage (I-V) and capacitance-voltage (C-V) measurements. The barrier height of Ti/p-type InP Schottky diode with PANI interlayer was higher than that of the conventional Ti/p-type InP Schottky diode, implying that the organic interlayer influenced the spacecharge region of the Ti/p-type InP Schottky junction. At higher voltages, the current transport was dominated by the trap free space-charge-limited current and trap-filled space-charge-limited current in Ti/p-type InP Schottky diode without and with PANI interlayer, respectively. The domination of trap filled space-charge-limited current in Ti/p-type InP Schottky diode with PANI interlayer could be associated with the traps originated from structural defects prevailing in organic PANI interlayer.

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Electrical Properties and Carrier Transport Mechanism of Au/<i>n</i>-GaN Schottky Contact Modified Using a Copper Pthalocyanine (CuPc) Interlayer

Cited by 13 publications

References 44 publications

Structural, electrical, and nonlinear optical performance of PVAL embedded with Li⁺‐ions for multifunctional devices

Structural, electrical, and nonlinear optical performance of PVAL embedded with Li⁺‐ions for multifunctional devices

Electronic Transport Mechanism for Schottky Diodes Formed by Au/HVPE a-Plane GaN Templates Grown via In Situ GaN Nanodot Formation

Modification of Schottky Barrier Properties of Ti/p-type InP Schottky Diode by Polyaniline (PANI) Organic Interlayer

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Electrical Properties and Carrier Transport Mechanism of Au/<i>n</i>-GaN Schottky Contact Modified Using a Copper Pthalocyanine (CuPc) Interlayer

Cited by 13 publications

References 44 publications

Structural, electrical, and nonlinear optical performance of PVAL embedded with Li+‐ions for multifunctional devices

Structural, electrical, and nonlinear optical performance of PVAL embedded with Li+‐ions for multifunctional devices

Electronic Transport Mechanism for Schottky Diodes Formed by Au/HVPE a-Plane GaN Templates Grown via In Situ GaN Nanodot Formation

Modification of Schottky Barrier Properties of Ti/p-type InP Schottky Diode by Polyaniline (PANI) Organic Interlayer

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Product

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Structural, electrical, and nonlinear optical performance of PVAL embedded with Li⁺‐ions for multifunctional devices

Structural, electrical, and nonlinear optical performance of PVAL embedded with Li⁺‐ions for multifunctional devices