Surface sensitive synchrotron x-ray photoelectron spectroscopy (XPS) and real-time in situ XPS were used to study the thermal stability of the hydroxyl termination and downward band bending on the polar surfaces of ZnO single crystals. On the O-polar face, the position of the Fermi level could be reversibly cycled between the conduction band and the band gap over an energetic distance of approximately 0.8 eV (similar to 1/4 of the band gap) by controlling the surface H coverage using simple ultrahigh vacuum (UHV) heat treatments up to 750 degrees C, dosing with H2O/H-2 and atmospheric exposure. A metallic to semiconductorlike transition in the electronic nature of the O-polar face was observed at an H coverage of approximately 0.9 monolayers. For H coverage less than this, semiconducting (depleted) O-polar surfaces were created that were reasonably stable in UHV conditions. In contrast, the downward band bending on the Zn-polar face was significantly more resilient, and depleted surfaces could not be prepared by heat treatment alone.preprintPeer reviewe

Demonstrating nonclassical effects over longer and longer distances is essential for both quantum technology and fundamental science. The main challenge is the loss of photons during propagation, because considering only those cases where photons are detected opens a ''detection loophole'' in security whenever parties or devices are untrusted. Einstein-Podolsky-Rosen steering is equivalent to an entanglement-verification task in which one party (device) is untrusted. We derive arbitrarily loss-tolerant tests, enabling us to perform a detection-loophole-free demonstration of Einstein-Podolsky-Rosen steering with parties separated by a coiled 1-km-long optical fiber, with a total loss of 8.9 dB (87%).

Demonstrating nonclassical effects over longer and longer distances is essential for both quantum technology and fundamental science. The main challenge is loss of photons during propagation, because considering only those cases where photons are detected opens a "detection loophole" in security whenever parties or devices are untrusted. Einstein-Podolsky-Rosen (EPR) steering is equivalent to an entanglement-verification task in which one party (device) is untrusted. We derive arbitrarily loss-tolerant tests, enabling us to perform a detection-loophole-free demonstration of EPR-steering with parties separated by a coiled 1 km optical fiber, with a total loss of 8.9 dB (87%).

No abstract

Using synchrotron-based luminescence excitation spectroscopy in the energy range 4-20 eV at 8 K, the indirect-X optical band-gap transition in cubic boron nitride is determined as 6.36 ± 0.03 eV, and the quasi-direct band-gap energy of hexagonal boron nitride is determined as 5.96 ± 0.04 eV. The composition and structure of the materials are self-consistently established by optically detected x-ray absorption spectroscopy, and both x-ray diffraction and Raman measurements on the same samples give independent confirmation of their chemical and structural purity: together, the results are therefore considered as providing definitive measurements of the optical band-gap energies of the two materials.

We analyse two classes of Einstein-Podolsky-Rosen (EPR)-steering inequalities, the violation of which can be used to demonstrate EPR-steering with an entangled two-qubit Werner state: linear inequalities and quadratic inequalities. We discuss how post-selection of results (by appeal to the fair sampling assumption) can compromise the rigour of these inequalities in experimental tests of EPR-steering. By considering the worst-case scenarios in which detector inefficiency or other loss could be exploited within a local hidden-state model, we derive inequalities that enable rigorous but loss-tolerant demonstrations of EPR-steering. The linear inequalities, and special cases of the quadratic inequalities, have been used in recent experiments. Our results indicate that regardless of the number of settings used, quadratic inequalities are never better, and often worse, than linear inequalities.

No abstract

Modification of GaAs Schottky diodes by thin organic interlayers, A.R. Vearey-Roberts and D.A. Evans, Appl. Phys. Lett. 86, 072105 (2005)Control of the interfacial potential barrier for metal/n-GaAs diodes has been achieved using thin interlayers of the organic semiconductor, tin phthalocyanine (SnPc). The I-V characteristics for organic-modified Ag/S:GaAs diodes indicate a change from rectifying to almost ohmic behavior as the thickness of the SnPc interlayer is increased. Modeling reveals thermionic emission to be the dominant transport mechanisms for all diodes (ideality factors, nPeer reviewe