Modern epitaxial techniques for HBT structures

Alexandre, François; Benchimol, J.L.; Launay, P.; Dangla, J.; Dubon‐Chevallier, C.

doi:10.1016/0038-1101(95)00048-x

Cited by 12 publications

(6 citation statements)

References 40 publications

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“…1) growth at lower temperature to suppress positively charged interstitial dopants and avoid redistribution of charge under stress conditions [20]; 2) improved passivation techniques in addition to use of ledge to suppress nonideal base currents [17]; 3) use of nonalloyed contacts and also InGaAs emitter cap to improve ohmic contact stability [21]; 4) In co-doping of the base [22]; 5) employment of C-doped GaInP emitter in conjunction with C-doped GaAs base to suppress performance sensitivity to dopant redistribution [23]. All devices used in this investigation were fabricated on wafers grown by metal organic chemical vapor deposition (MOCVD) technique.…”

Section: Hbt Technology and Long Term Reliabilitymentioning

confidence: 99%

Relation between low-frequency noise and long-term reliability of single AlGaAs/GaAs power HBTs

Mohammadi

Pavlidis

Bayraktaroglu

2000

IEEE Trans. Electron Devices

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Self-aligned AlGaAs/GaAs single heterojunction bipolar transistors (HBT's) were fabricated using an advanced processing technology for microwave and millimeter-wave power applications. These devices were processed simultaneously, on different epilayers with similar layer structure design supplied from different vendors. They showed similar dc characteristics (current gain, = 30) and their microwave performance was also identical (= 60 GHz, max = 100 GHz). The HBT's showed different noise and reliability characteristics depending on their epilayer origin. HBT's from the high-reliability wafer showed MTTF of 10 9 h at junction temperature of 120 C. They also presented very small 1 noise with corner frequencies in the range of a few hundred Hz. Devices were subjected to bias and temperature stress for testing their noise and reliability characteristics. Stressed and unstressed devices showed generation-recombination noise with activation energies between 120-210 meV. Stress was found to increase the generation-recombination noise intensity but not its activation energy. These HBT's did not show any surface-related noise indicating that processing did not significantly influence noise characteristics. It was found that the base noise spectral density at low frequency can be correlated to the device long term reliability.

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Section: Hbt Technology and Long Term Reliabilitymentioning

confidence: 99%

Relation between low-frequency noise and long-term reliability of single AlGaAs/GaAs power HBTs

Mohammadi

Pavlidis

Bayraktaroglu

2000

IEEE Trans. Electron Devices

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“…2, that without CBr 4 flow, the C concentration is already very high. Indeed, it is known that under specific growth conditions, a non-negligible amount of carbon comes from the decomposition of TMAl and/or TMIn organometallic sources [2]. More surprisingly on this profile, the In content in InAlAs increases with the flow rate of CBr 4 .…”

Section: Resultsmentioning

confidence: 98%

“…Compared to the more conventional Zn p-type dopant used in metalorganic vapor phase epitaxy (MOVPE), C has a very low diffusion coefficient and extremely high achievable doping levels (41 Â10 19 cm À3 ). This is especially required for the base region of heterojunction bipolar transistors or for the heavily doped contact layers of some optoelectronic devices [1,2]. Using CBr 4 as a source of carbon, Ito and Yokoyama [3] and Ougazzaden et al [4] have reported very high p-type doping levels in MOVPE grown C:InAlAs lattice matched to InP.…”

Section: Introductionmentioning

confidence: 99%

Optically in-situ monitored growth of carbon doped InAlAs by LP-MOVPE using CBr4

Décobert

Lagay

Thevenard

2008

Journal of Crystal Growth

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“…So, interesting dopants for heavy p-type doping of base must have a high incorporation rate and a low diffusion coefficient. That is why carbon appears as an attractive alternative to conventionally used p-type impurity such as beryllium [1][2][3][4].…”

Section: Introductionmentioning

confidence: 99%