CBr4 and Be heavily doped InGaAs grown in a production MBE system

Influence of doping level and surface states in tunneling spectroscopy of an In0.53Ga0.47As quantum well grown on Vergel1, Tadjine2, Notot3 et al. 2019Phys. Rev. Materials6140View full textAdd to dashboardCite

“…Therefore, assuming a similar surface conductivity as the one found for the semidoped sample, a mean resistance R 4p of 661 yields a conductivity in the quantum well of 173 S cm −1 . This high conductivity matches an average hole concentration of a few 10 19 cm −3 , for which the mobility is about 50 cm 2 V −1 s −1 [30]. Such a concentration, which is smaller than the measured concentration of Be atoms in the QW, suggests that the Be atoms that have segregated to the surface of the sample might not be electrically active.…”

“…where μ p and p are the hole mobility and the hole concentration, respectively. A hole concentration of 1 × 10 19 cm −3 results in a mobility of about 70 cm 2 V −1 s −1 [30]. Assuming a QW width of 5 nm at most yields a four-probe resistance higher than 4 k , which cannot explain the measured resistance of 1373 .…”

MBE growth of heavily carbon doped GaAsSb on InP for heterojunction bipolar transistor applications

“…The maximum doping level of 4.5.10 20 cm À3 is the highest ever reported for SSMBE growth. Contrary to InGaAs [5], no surface morphology degradation has been observed even at maximal doping level. 4-8 Â 10 19 cm À3 range, typically used in HBTs, the hole mobility is 45-50 cm 2 /V s. These values are only slightly lower than those measured in InGaAs for similar carrier concentrations [5] and significantly higher than those reported up to now for GaAsSb [6,7].…”

“…In the explored temperature range the carrier concentration decreases by $45%. This has been observed on C-doped InGaAs [5] and GaAs layers [10]. In this latter case this behaviour has been attributed to a modification of the carbon incorporation mechanism due to the formation of C-C complexes.…”

“…Thanks to these properties and allowing very high doping levels up to $10 20 cm À3 , carbon is now the reference p doping element for the base layer of III-V HBTs. Recently, Godey et al [5] have reported results on the carbon doping of InGaAs lattice matched on InP, grown with a Riber solid source MBE (SSMBE) 49 machine and using a CBr 4 source. A doping level of 2 Â 10 20 cm À3 with a corresponding 300 K mobility of 30 cm 2 /V s have been obtained.…”