Influence of the doping type on the temperature dependencies of the photoluminescence efficiency of InGaAlAs/InGaAs/InP heterostructures

Novikov, I. I.; Nadtochiy, A. M.; Potapov, A. M.; Gladyshev, A. G.; Kolodeznyi, E. S.; Rochas, S. S.; Babichev, A. V.; Andryushkin, V. V.; Denisov, D. V.; Karachinsky, L. Ya.; Egorov, A. Yu.; Bougrov, V. E.

doi:10.1016/j.jlumin.2021.118393

Cited by 4 publications

(3 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Full width at half maximum (FWHM) of the MQW PL band is 12−18 meV at the nitrogen temperature when FWHM is defined mainly by fluctuations of the well composition and thickness rather than by the temperature expansion. The measured PL band width is typical of the InGaAlAs/InAlAs MQW [14,15] and is relevant to the composition fluctuations within 1−2%.…”

mentioning

confidence: 88%

InGaAlAs/InAlAs heterostructures for electro-absorption modulator

Gulyaev

Kolosovsky

Dmitriev

et al. 2022

Technical Physics Letters

View full text Add to dashboard Cite

The structural and optical characteristics of heterostructures with InGaAlAs/InAlAs quantum wells, in which a quaternary alloy is obtained by alternating monolayer growth of InAlAs and InGaAs layers by molecular beam epitaxy, have been investigated. It has been shown that obtained heterostructures are promising for creation of electro-absorption modulators designed for a wavelength of 1.55 μm with the extinction coefficient of more than 20 dB at a voltage of less than 4 V. Keywords: Electro-absorption modulator, molecular beam epitaxy, quantum wells, Stark effect.

show abstract

mentioning

confidence: 88%

InGaAlAs/InAlAs heterostructures for electro-absorption modulator

Gulyaev

Kolosovsky

Dmitriev

et al. 2022

Technical Physics Letters

View full text Add to dashboard Cite

show abstract

“…Квантовые точки (КТ) используются в качестве активных областей для широкого круга лазерных применений [1], в том числе в лазерах с микрорезонатором для нейроморфных вычислений [2,3]. В источниках одиночных фотонов требуется малая плотность КТ [4], однако в лазерных структурах с вертикальным микрорезонатором, где изначально объем активной области минимален, наоборот, требуется повышать плотность КТ, чтобы достигнуть порога лазерной генерации. Оптическое усиление активных областей на основе " идеальных" КТ должно превышать оптическое усиление активных областей на основе квантовых ям (КЯ), однако на практике ситуация иная, что обусловлено эффектом неоднородного уширения в ансамбле КТ.…”

Section: Introductionunclassified

Исследование фотолюминесценции в системе InGaAs/GaAs с квантовыми точками спектрального диапазона 1100 нм

Бабичев¹,

Комаров²,

Ткач³

et al. 2023

Физика И Техника Полупроводников

View full text Add to dashboard Cite

The results of studying the optical properties of InGaAs quantum dots are presented. Single-layer InGaAs quantum dots with a height of 5.3, 3.6 and 2.6 monolayers, as well as three-stacked layers of tunnel-uncoupled quantum dots with a height of 2.6 monolayers were formed by molecular–beam epitaxy according to the Stransky-Krastanov mechanism on GaAs substrates, using the partial capping and annealing technique. A decrease in the size of quantum dots makes it possible to carry out a blueshift of the photoluminescence spectrum maximum from 1200 nm to 1090 nm, and an increase in the number of QD layers makes it possible to compensate for the decrease in the peak intensity. It is shown that this type of quantum dots is suitable for creating the lasers active regions with a vertical microcavity for neuromorphic computing.

show abstract

“…Quantum dots (QDs) are used as active regions for a wide range of laser applications [1], including in lasers with a microresonator for neuromorphic computing [2,3]. In single photon sources, a low QD density is required [4], however, in laser structures with a vertical microresonator, where initially the volume of the active region is minimal, on the contrary, it is necessary to increase the QD density in order to reach the laser generation threshold. The optical gain of the active regions based on " ideal" QD should exceed the optical gain of the active regions based on quantum wells, but in practice the situation is different, due to the effect of inhomogeneous broadening in the ensemble of QDs.…”

Section: Introductionmentioning

confidence: 99%

Investigation of photoluminescence in the InGaAs/GaAs system with 1100-nm range quantum dots

Babichev A.V.,

Komarov S.D.,

Tkach Yu.S.

et al. 2023

Semiconductors

View full text Add to dashboard Cite

The results of studying the optical properties of InGaAs quantum dots are presented. Single-layer InGaAs quantum dots with a height of 5.3, 3.6 and 2.6 monolayers, as well as three-stacked layers of tunnel-uncoupled quantum dots with a height of 2.6 monolayers were formed by molecular-beam epitaxy according to the Stransky--Krastanov mechanism on GaAs substrates, using the partial capping and annealing technique. A decrease in the size of quantum dots makes it possible to carry out a blueshift of the photoluminescence spectrum maximum from 1200 nm to 1090 nm, and an increase in the number of QD layers makes it possible to compensate for the decrease in the peak intensity. It is shown that this type of quantum dots is suitable for creating the lasers active regions with a vertical microcavity for neuromorphic computing. Keywords: molecular-beam epitaxy, gallium arsenide, InGaAs, Stranski--Krastanow mode.

show abstract

Influence of the doping type on the temperature dependencies of the photoluminescence efficiency of InGaAlAs/InGaAs/InP heterostructures

Cited by 4 publications

References 26 publications

InGaAlAs/InAlAs heterostructures for electro-absorption modulator

InGaAlAs/InAlAs heterostructures for electro-absorption modulator

Исследование фотолюминесценции в системе InGaAs/GaAs с квантовыми точками спектрального диапазона 1100 нм

Investigation of photoluminescence in the InGaAs/GaAs system with 1100-nm range quantum dots

Contact Info

Product

Resources

About