MBE growth of heavily carbon doped GaAsSb on InP for heterojunction bipolar transistor applications

Impact of CBr4, V/III ratio, temperature and AsH3 concentration on MOVPE growth of GaAsSb:C

“…The hole concentration for [CBr 4 ]o[CBr 4 ] max increases with decreasing T g from 550 to 510 1C, even though c(AsH 3 ) was increased by 0.2. Other authors reported similar behaviors for GaAsSb:C [27] and GaAs:C [28], and they attributed the hole reduction with increasing T g to the formation of C-C pairs. At T g =510 1C and R inlet =0.25, GaAsSb:C layers with As contents of up to x=0.7 and hole concentrations around 1 Â10 20 cm À3 could finally be achieved.…”

“…Because other authors have previously reported on a higher free hole concentration at lower growth temperatures in both GaAsSb [27] and GaAs [28], we performed additional growths at different T g . Figs.…”

High electric field transport in GaAs0.51Sb0.49

“…The phase diagram for the ternary was described by Lendvay [17]. As a result, GaAs 0.51 Sb 0.49 layers, lattice matched to InP, have been grown by vapor-phase epitaxy [18], molecular beam epitaxy [19][20][21], and metal-organic CVD [5,9,22]. With a lattice mismatch, strain in the epitaxial layer results, but this strain has also been relatively well studied [23].…”

Si doping of MBE grown bulk GaAsSb on InP

“…One key advantage for both applications is the ability to achieve high p-type doping using carbon. Acceptor concentrations exceeding 1 Â 10 20 cm À 3 with mobilities still above 40 cm 2 /V s were reported for films grown by molecular beam epitaxy (MBE) [4] and metal-organic chemical vapor deposition (MOCVD) [5]. Due to its frequent use in DHBTs and solar cells, p-doped GaAsSb is a well characterized material.…”