Models of dielectric response in disordered solids

Abstract

Two dispersion models of disordered solids, one parameterizing density of states (PDOS) and the other parameterizing joint density of states (PJDOS), are presented. Using these models, not only the complex dielectric function of the materials, but also some information about their electronic structure can be obtained. The numerical integration is necessary in the PDOS model. If analytical expressions are required the presented PJDOS model is, for some materials, a suitable option still providing information about the electronic structure of the material. It is demonstrated that the PDOS model can be successfully applied to a wide variety of materials. In this paper, its application to diamond-like carbon (DLC), a-Si and SiO2-like materials are discussed in detail. Unlike the PDOS model, the presented PJDOS model represents a special case of parameterization that can be applied to limited types of materials, for example DLC, ultrananocrystalline diamond (UNCD) and SiO2-like.

Tetrakis(trimethylsilyloxy)silane for nanostructured SiO2-like films deposited by PECVD at atmospheric pressure

“…The ISR spectra were measured at normal incidence of light in the spectral range between 270 and 900 nm with pixel size (spatial resolution) of 37 × 37 μm 2 . They were fitted using the PJDOS dispersion model for SiO 2 -like materials [25] in custom software as described in a previous work [24].…”

Deposition of hard thin films from HMDSO in atmospheric pressure dielectric barrier discharge

“…The transitions corresponding to the localized states as well as the phonon absorption were both parameterized by Gaussian broadened peaks. For details see [43]. Sample imperfections such as non-uniformity and roughness were also taken into account.…”

Modeling of dielectric response of GexSbyTez (GST) materials

“…The function N and J are called unnormalized as they are not normalized to the total density of states (for details see [9]). The Eqs.…”