Modelling temperature dependence on AlGaN/GaN power HEMT device characteristics

Wang, Yun-Hsiang; Liang, Yung C.; Samudra, Ganesh S.; Chang, Tsin‐Yuan; Chen, Huang-Chin; Li, Yuan; Lo, Guo‐Qiang

doi:10.1088/0268-1242/28/12/125010

Cited by 32 publications

(25 citation statements)

References 46 publications

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“…Schottky contact barrier height f b of the 150 nm gate device ( figure 10) shows lower values due to the higher leakage current. The change in Schottky barrier height with temperature in this work (figure 10) agrees with the work in [11]. The evaluation proposed here is only the point of temperature-dependence since for accurate determination of the Schottky barrier height, one would need to measure equal samples with different barrier thicknesses to minimise the errors.…”

Section: Temperature-dependent DC Characterizationsupporting

confidence: 84%

Thermal characterization of DC and small-signal parameters of 150 nm and 250 nm gate-length AlGaN/GaN HEMTs grown on a SiC substrate

Alim

Rezazadeh

Gaquière

2015

Semicond. Sci. Technol.

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This paper investigated the temperature effects on the performance of the AlGaN/GaN high electron mobility transistor (HEMT) with a 150 nm and 250 nm gate length on a SiC substrate over a temperature range of −40 to 150°C including experimental characterization, modelling and analysis by on-wafer measurements up to 50 GHz. All the DC and small signal parameter variations with ambient temperature on the same set of devices have been reported for the first time. The temperature coefficient of all the DC and small signal parameters as well as f t and f max were reported. Some of the extracted equivalent circuit parameters with the theoretical data of the evolution of electrical parameters and the relevant physical equations involved have been compared using the same biasing condition for further accuracy. The theoretical results are shown to be consistent with the extracted data. Some results are also experimentally verified with previous works cited in the paper. The results provide some valuable insights for the underlying physics of the device parameters affected by temperature.

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Section: Temperature-dependent DC Characterizationsupporting

confidence: 84%

Thermal characterization of DC and small-signal parameters of 150 nm and 250 nm gate-length AlGaN/GaN HEMTs grown on a SiC substrate

Alim

Rezazadeh

Gaquière

2015

Semicond. Sci. Technol.

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“…Because of that, for V ds > V ds (sat) , I d continuously reduces its magnitude because a relative increase in channel temperature would increase scattering, causing a reduction in υ sat , which has a direct relationship with I d . Figure B,C shows modeled characteristics using Chattopadhyay and Wang models, respectively. Plots of Figure clearly exhibit that the proposed model's performance is considerably better than Wang and Chattopadhyay models especially, in the saturation region of operation.…”

Section: Resultsmentioning

confidence: 99%

“…Wang et al in 2013 also proposed a temperature dependent model for AlGaN/GaN HEMT . In their model, they identified temperature dependent parameters that influence the device characteristics.…”

Section: Introductionmentioning

confidence: 99%

An improved temperature dependent analytical model to predict AlGaN/GaN high electron mobility transistors AC characteristics

Khan

Ahmed

Rehman

2019

Int J Numerical Modelling

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In this paper, an improved temperature dependent model has been presented to predict AC characteristics of submicron AlGaN/GaN high electron mobility transistors (HEMTs). The model evaluates effects of channel temperature on the device AC intrinsic parameters. It has been shown that the rise of channel temperature is almost linear in nature, and it depends upon both the ambient temperature as well as on the operating voltages of the device. By reassessing two dimensional electron gas (2‐DEG) carrier concentration, ns, high electron mobility transistor (HEMT)'s analytical I−V equations for both linear as well as saturation regions have been modified. The modeled DC characteristics showed a good degree of accuracy with the experimental data. By evaluating temperature and bias dependent charge accumulation in the depletion region of the device, an AC model for the device intrinsic parameters has been developed. S‐parameters of the device have been evaluated by using the modeled AC intrinsic parameters that showed a good agreement with the measured data. Thus, the developed technique could be a useful tool to predict AC parameters of submicron AlGaN/GaN HEMTs meant for harsh environments.

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“…However, we expect the HEMT output power to depend on temperature of the AlGaN/GaN junction; as the output power exceeds 500 W, the AlGaN/GaN junction temperature rises. The AlGaN/GaN HEMT drain current has been shown to drop as a function of junction temperature and one expects the output power to also decline at high temperature (Wang et al, 2013). Several aspects of HEMT performance are of particular concern for space-borne applications.…”

Section: Gallium Nitride High Electron Mobility Transistorsmentioning

confidence: 99%

Space-Borne Electron Accelerator Design

Lewellen

Buechler

Carlsten

et al. 2019

Front. Astron. Space Sci.

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Renewed interest in active experiments with relativistic particle beams in space has led to the development of solid-state radio-frequency (RF) linear accelerators (linac) that can deliver MeV electron beams but operate with low-voltage DC power supplies. The solid-state RF amplifiers used to drive the accelerator are known as high-electron mobility transistors (HEMTs), and at C-band (5-6 GHz) are capable of generating up to 500 watts of RF power at 10% duty factor in a small package, i.e., the size of a postage stamp. In operation, the HEMTs are powered with 50 V DC as their bias voltage; they thus can tap into the spacecraft batteries or electrical bus as the primary power source. In this paper we describe the initial testing of a compact space-borne RF accelerator consisting of individual C-band cavities, each independently powered by a gallium nitride (GaN) HEMT. We show preliminary test results that demonstrate the beam acceleration in a single C-band cavity powered by a single HEMT operating at 10% duty factor. An example of active beam experiments in space that could benefit from the HEMT-powered accelerators is the proposed Magnetosphere-Ionosphere Connection (CONNEX) experiment (Dors et al., 2017).

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Modelling temperature dependence on AlGaN/GaN power HEMT device characteristics

Cited by 32 publications

References 46 publications

Thermal characterization of DC and small-signal parameters of 150 nm and 250 nm gate-length AlGaN/GaN HEMTs grown on a SiC substrate

Thermal characterization of DC and small-signal parameters of 150 nm and 250 nm gate-length AlGaN/GaN HEMTs grown on a SiC substrate

An improved temperature dependent analytical model to predict AlGaN/GaN high electron mobility transistors AC characteristics

Space-Borne Electron Accelerator Design

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