1998
DOI: 10.1016/s0026-2714(98)00115-2
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Modelling and simulation of hot-carriers degradation of high voltage floating lateral NDMOS transistors

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“…In Ref. [22], it is suggested that for low V G , the region of highest ionisation rate is somewhat removed from the interface near A in Fig. 11.…”
Section: Degradation In Dmos Devicesmentioning
confidence: 91%