Modeling the undoped-body symmetric dual-gate MOSFET

Malobabic, Slavica; Ortíz‐Conde, A.; Sánchez, F.J. Garcı́a

doi:10.1109/iccdcs.2004.1393346

Cited by 8 publications

(12 citation statements)

References 14 publications

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“…Ortiz-Conde et al presented an approximate solution to the undoped s-DG surface potential [13] in comparison with the iterative one, and an implicit solution by numerical iteration [15] for generic doped MOSFETs with two gates. Undoped s-DG MOSFETs have been solved both implicitly [16][17][18] and analytically [18][19][20], while undoped asymmetric cases have only been solved implicitly in literature [11]. Subthreshold characteristics in short channel double-gate MOSFETs has also been solved analytically [26].…”

Section: Introductionmentioning

confidence: 99%

A Continuous Regional Current-Voltage Model for Short-channel Double-gate MOSFETs

Zhu¹,

Yan²,

Xu³

et al. 2013

JSTS:Journal of Semiconductor Technology and Science

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Abstract-A continuous, explicit drain-current equation for short-channel double-gate (DG) MOSFETs has been derived based on the explicit surface potential equation. The model is physically derived from Poisson's equation in each region of operation and adopted in the unified regional approach. The proposed model has been verified with numerical solutions, physically scalable with channel length and gate/oxide materials as well as oxide/channel thicknesses.

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Section: Introductionmentioning

confidence: 99%

A Continuous Regional Current-Voltage Model for Short-channel Double-gate MOSFETs

Zhu¹,

Yan²,

Xu³

et al. 2013

JSTS:Journal of Semiconductor Technology and Science

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“…In parallel with technological efforts for the realization of these nanostructures, much work has been devoted to the understanding and modeling of the behavior of DG MOSFET devices (Balestra et al, 1987;Taur, 2000;Malobabic et al, 2004;Kilchytska et al, 2004). The absence of doping in the silicon substrate and channel has created increased possibilities for analytical calculation of Poisson's equation in the silicon film (Taur, 2000), where only one type of mobile mobile charge has been used.…”

Section: Introductionmentioning

confidence: 99%

“…The absence of doping in the silicon substrate and channel has created increased possibilities for analytical calculation of Poisson's equation in the silicon film (Taur, 2000), where only one type of mobile mobile charge has been used. An important step in the analytical modeling of DG SOI MOSFET has been done by Malobabic et al (2004) where the influence of the applied voltage along the channel on the mobile charge in the silicon film is introduced. In their paper Malobabic et al (2004), the Lambert function has been used for the calculation of the surface electrostatic potential in the silicon.…”

Section: Introductionmentioning

confidence: 99%

“…We describe a new procedure of solving the electrostatic potentials in the silicon film of an undoped DG SOI MOSFET structure. Starting from a model previously described in the literature by Malobabic et al (2004), we propose the bisection method for the solution of transcendental equation giving the surface electrostatic potential of the silicon channel, as a function of the gate to source voltage and the voltage along the channel. The above calculated results are used for obtaining the charges and corresponding drain current in the DG MOSFET transistor.…”

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confidence: 99%

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A Verilog-A model of an undoped symmetric dual-gate MOSFET

2006

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Abstract. We describe a new procedure of solving the electrostatic potentials in the silicon film of an undoped DG SOI MOSFET structure. Starting from a model previously described in the literature by Malobabic et al. (2004), we propose the bisection method for the solution of transcendental equation giving the surface electrostatic potential of the silicon channel, as a function of the gate to source voltage and the voltage along the channel. The above calculated results are used for obtaining the charges and corresponding drain current in the DG MOSFET transistor. The entire model is implemented in Verilog A and can be used inside Cadence for the determination of the static regime of electrical circuits based on undoped symmetric DG SOI MOSFET. As a case study, a simple common-source amplifier built with such a novel device is analyzed, showing the currents and voltages present in the circuit.

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“…In the last years, 1-D analytical modeling of both symmetric Malobabic et al, 2004) and asymmetric (Taur, 2001) DG SOI MOSFETs has been used for the description of their DC electrical behavior and the understanding of the device physics.…”

Section: Introductionmentioning

confidence: 99%

Results and limits in the 1-D analytical modeling for the asymmetric DG SOI MOSFET

Cobianu

Glesner

2008

Adv. Radio Sci.

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Abstract. This paper presents the results and the limits of 1-D analytical modeling of electrostatic potential in the low-doped p type silicon body of the asymmetric n-channel DG SOI MOSFET, where the contribution to the asymmetry comes only from p-and n-type doping of polysilicon used as the gate electrodes. Solving Poisson's equation with boundary conditions based on the continuity of normal electrical displacement at interfaces and the presence of a minimum electrostatic potential by using the Matlab code we have obtained a minimum potential with a slow variation in the central zone of silicon with the value pinned around 0.46 V, where the applied V GS voltage varies from 0.45 V to 0.95 V. The paper states clearly the validity domain of the analytical solution and the important effect of the localization of the minimum electrostatic potential value on the potential variation at interfaces as a function of the applied V GS voltage.

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Modeling the undoped-body symmetric dual-gate MOSFET

Cited by 8 publications

References 14 publications

A Continuous Regional Current-Voltage Model for Short-channel Double-gate MOSFETs

A Continuous Regional Current-Voltage Model for Short-channel Double-gate MOSFETs

A Verilog-A model of an undoped symmetric dual-gate MOSFET

Results and limits in the 1-D analytical modeling for the asymmetric DG SOI MOSFET

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