Modeling the nucleation and evolution of end of range dislocation loops in silicon

Avci, I.; Law, Mark E.; Kuryliw, E.; Jones, K. S.

doi:10.1109/iedm.2001.979643

Cited by 4 publications

(3 citation statements)

References 6 publications

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“…In turn, as it is shown in Fig. 4, a small change in the position of the a/c interface may result in a large variation in the amount of residual damage remaining after SPER [97].…”

Section: Critical Energy/defect Density Modelmentioning

confidence: 86%

Improved physical models for advanced silicon device processing

Pelaz

Marqués

Aboy

et al. 2017

Materials Science in Semiconductor Processing

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We review atomistic modeling approaches for issues related to ion implantation and annealing in advanced device processing. We describe how models have been upgraded to capture physical mechanisms in more detail as a response to the accuracy demanded in modern process and device modeling. Implantation and damage models based on the binary collision approximation have been improved to describe the direct formation of amorphous pockets for heavy or molecular ions. The use of amorphizing implants followed by solid phase epitaxial regrowth has motivated the development of detailed models that account for amorphization and recrystallization, considering the influence of crystal orientation and stress conditions. We apply simulations to describe the role of implant parameters to minimize residual damage, and we address doping issues that arise in non-planar structures such as FinFETs.

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“…In turn, as it is shown in Fig. 4, a small change in the position of the a/c interface may result in a large variation in the amount of residual damage remaining after SPER [97].…”

Section: Critical Energy/defect Density Modelmentioning

confidence: 86%

Improved physical models for advanced silicon device processing

Pelaz

Marqués

Aboy

et al. 2017

Materials Science in Semiconductor Processing

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“…3 Different CDC values applied to the theoretical damage profile lead to variations in the predicted a/c interface depth, and this strongly affects the amount of residual damage beyond the interface. 5 The variety of CDC values reflects the different resistance of damage to annealing, and it has a noticeable effect when dynamic annealing is intense. Improved models require a better understanding of the mechanisms underlying the formation and recrystallization of amorphous regions, and to account for the dynamic annealing of damage during the implant.…”

Section: Introductionmentioning

confidence: 99%

Atomistic analysis of the annealing behavior of amorphous regions in silicon

López

Pelaz

Marqués

et al. 2007

Journal of Applied Physics

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We have analyzed the features of recrystallization of amorphous regions, using an atomistic amorphization-recrystallization model that considers the Si interstitial-vacancy pair as the building block for the amorphous phase. Both small amorphous pockets and large continuous amorphous layers are modeled as an accumulation of Si interstitial-vacancy pairs. In our model recrystallization is envisioned as a local rearrangement of atoms, the recrystallization rate of Si interstitial-vacancy pairs being determined by their local coordination. This feature explains the differences in the annealing behavior of amorphous regions with different topologies, the faster regrowth velocity of the damage tail compared with the continuous amorphous layer, and the independence of the regrowth velocity on the amorphous layer depth.

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“…This effect can often lead to unacceptable junction depths in bulk silicon devices. Modeling of {3 1 1} defect [3][4][5][6] and dislocation loop [7] behavior has greatly improved the validity of process simulators. Unfortunately, up to this point no such models exist for SOI.…”

Section: Introductionmentioning

confidence: 99%