Kinetics of {311} defect dissolution in silicon-on-insulator (SOI)

Saavedra, Antonio F.; Jones, K. S.; Law, Mark E.; Chan, K.

doi:10.1016/j.mseb.2003.11.004

Cited by 2 publications

(2 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…1 Reduced short channel effects, improved speed, and reduced power consumption in complementary metal oxide semiconductor devices are all achievable with these substrates. 2 An additional advantage of SOI consists of the possibility to reduce the number of silicon interstitials created during the source/drain implant steps by recombining them at the buried Si-SiO 2 interface, which results in a better control of several deleterious effects, such as extended defect formation, 3,4 dopant deactivation, 5 and transient enhanced diffusion ͑TED͒. 6 The behavior of the buried Si-SiO 2 interface with respect to the implant-generated interstitial excess has been a longstanding subject of research and, with the exception of a few reports suggesting that the interface has no impact at all on dopant diffusion 7 or acts has a reflective boundary for interstitials, 8 the vast majority of previous reports shows that it behaves as an efficient sink for interstitials.…”

Section: Introductionmentioning

confidence: 99%

“…6 The behavior of the buried Si-SiO 2 interface with respect to the implant-generated interstitial excess has been a longstanding subject of research and, with the exception of a few reports suggesting that the interface has no impact at all on dopant diffusion 7 or acts has a reflective boundary for interstitials, 8 the vast majority of previous reports shows that it behaves as an efficient sink for interstitials. [3][4][5][6][9][10][11] Several physical phenomena have been investigated in these studies which give a more or less direct evidence of the interstitial recombination at the Si-SiO 2 interface. In some cases, a quantitative estimation of the recombination length for interstitials at the interface L int has also been given.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Modeling of the effect of the buried Si–SiO2 interface on transient enhanced boron diffusion in silicon on insulator

Bazizi

Pakfar

Tavernier

et al. 2010

Journal of Applied Physics

View full text Add to dashboard Cite

The effect of the buried Si-SiO 2 interface on the transient enhanced diffusion ͑TED͒ of boron in silicon on insulator ͑SOI͒ structures has been investigated. To this purpose, boron marker layers were grown by chemical vapor deposition on Si and SOI substrates and implanted under nonamorphizing conditions with 40 keV Si + ions. The experimental results clearly confirm that the Si-SiO 2 interface is an efficient trap for the Si interstitial atoms diffusing out of the defect region. Based on these experiments, existing models for the simulation of B TED in silicon have been modified to include an additional buried recombination site for silicon interstitials. The simulation results provide an upper limit of ϳ5 nm for the recombination length of interstitials at the Si-SiO 2 interface.

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Modeling of the effect of the buried Si–SiO2 interface on transient enhanced boron diffusion in silicon on insulator

Bazizi

Pakfar

Tavernier

et al. 2010

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

Electrical activation in silicon-on-insulator after low energy boron implantation

Saavedra

Jones

Law

et al. 2004

Journal of Applied Physics

View full text Add to dashboard Cite

We have investigated the electrical activation of implanted boron in silicon-on-insulator (SOI) material using Hall effect, four-point probe, and secondary ion mass spectrometry. Boron was implanted at energies ranging from 1 keV to 6.5 keV with a dose of 3 ϫ 10 14 cm −2 into bonded SOI wafers with surface silicon thickness ranging from 300 Å to 1600 Å. In one sample set, furnace anneals at 750°C were performed in a nitrogen ambient for times ranging from 5 min to 48 h. A second sample consisted of isochronal furnace anneals performed from 450°C to 1050°C for 30 min. Significantly less activation of boron is observed in SOI at temperatures below 750°C, regardless of the implant energy and surface silicon thickness. Between 750°C and 900°C, the active dose of boron in SOI is similar to that of bulk Si. As the implant energy increases, the fractional activation in thin SOI increases, due to a reduction in boron interstitial clusters (BIC) in the surface Si layer. It is concluded that an increase in the BIC population is the likely source of the low activation observed in SOI. This may be due to an increase in the interstitial supersaturation within the surface Si layer, due to the interface acting as a reflective boundary for interstitials.

show abstract

Kinetics of {311} defect dissolution in silicon-on-insulator (SOI)

Cited by 2 publications

References 18 publications

Modeling of the effect of the buried Si–SiO2 interface on transient enhanced boron diffusion in silicon on insulator

Modeling of the effect of the buried Si–SiO2 interface on transient enhanced boron diffusion in silicon on insulator

Electrical activation in silicon-on-insulator after low energy boron implantation

Contact Info

Product

Resources

About