Modeling pattern transfer in ion-beam lithography masks

Frisque, Gary A.; Tejeda, R.; Engelstad, R. L.; Lovell, Edward G.

doi:10.1016/s0167-9317(00)00391-9

Cited by 5 publications

(2 citation statements)

References 4 publications

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“…Other studies (e.g., Refs. [7,8]) concerned with the modelling of in-plane distortions of masks used in ion-beam lithography and X-ray lithography. Nevertheless, there appears to be no significant investigations into reducing out-of-plane deformations of the mask, which is vital for pattern definition by nanostencil lithography.…”

Section: Stencil Deposition Principles Issues and Previous Workmentioning

confidence: 99%

Predicting mask distortion, clogging and pattern transfer for stencil lithography

Lishchynska¹,

Bourenkov²,

Boogaart

et al. 2007

Microelectronic Engineering

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One of the ultimate tasks for stencil lithography is the ability to fabricate arrays of structures with controlled dimensions on the nanometer scale precisely positioned on a suitable surface. The race to shrink feature sizes requires the limits of conventional lithography to be extended to high-throughput, low cost, reliable and well-controlled processes of which stencilling is a promising candidate for nanoscale applications. Identifying, predicting and overcoming issues accompanying nanostencil lithography is critical to the successful and timely development of this technique for a wide range of potential applications. This paper addresses phenomena associated with stencil nanopatterning and presents the results of modelling and simulation studies for predicting the deleterious effects of mask distortion and clogging during pattern transfer. It is shown that degrading effects of stress-induced deformation of stencils can be dealt with via optimal design of corrugation structures which in turn reduce stencil deformation and significantly improves pattern definition. Modelling results are validated by comparison to experiment. The corrugation structures can be used to define practical design rules for fabrication of stable large area (''full scale'') purpose-designed stencil membranes. The accurate modelling of the clogging phenomenon combined with gradually evolving stencil deformation, also presented in the paper, can be used for prediction of pattern distortion, to calculate maximum thickness of a deposited layer and/or for prediction of the stencil lifetime.

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Section: Stencil Deposition Principles Issues and Previous Workmentioning

confidence: 99%

Predicting mask distortion, clogging and pattern transfer for stencil lithography

Lishchynska¹,

Bourenkov²,

Boogaart

et al. 2007

Microelectronic Engineering

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“…Pattern distortion which is the maximum deformation caused by pattern distribution has been calculated by finite element method (FEM) simulations [6][7][8][9][10].…”

Section: Image Placementmentioning

confidence: 99%

The improvement of the overlay accuracy using the reticle distortion correction for EPL technologies

Koike¹,

Sakaue²,

Arimoto³

et al. 2005

SPIE Proceedings

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Electron projection lithography (EPL) is one of the most promising candidates for the next generation lithography toward the hp 45 nm-node and beyond. EPL employs a stencil mask made from 200 mm Si wafer without a support frame, therefore chucking of an EPL tool and a metrology tool causes deformation in an EPL reticle. However, linear components of sub-field (SF) position error can be corrected by reticle alignment features of an EPL tool, whereas the non-linear components of SF position error can be corrected where each SF is measured beforehand and the corresponding reticle distortion correction (RDC) data is fed into the EPL exposure tool. The SF position error can be viewed as inter-SF IP error where it can be affected by the repeatability of measurement and by the repeatability of distortions caused by the chucking of the measurement tool and the EPL tool. The other part of inter-SF IP comes from the residual that relates to global IP. Besides inter-SF IP, intra-SF IP can be divided into "local IP" and "pattern distribution". For our studies we have investigated the measurement repeatability of the metrology tool (Nikon XY-6i), distortion repeatabilities caused by the chucking of the metrology tool and the EPL tool (NSR-EB1A), global and local IPs, and pattern distortion. Currently we find the effect of mask IP on wafer scale is less than 9 nm, and we believe that in the near future the EPL mask IP target for the hp 45 nm-node could be realized.

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Ion Projection Lithography: Progress of European MEDEA & International Program

Kaesmaier¹,

Löschner²

2000

Microelectronic Engineering

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Modeling pattern transfer in ion-beam lithography masks

Cited by 5 publications

References 4 publications

Predicting mask distortion, clogging and pattern transfer for stencil lithography

Predicting mask distortion, clogging and pattern transfer for stencil lithography

The improvement of the overlay accuracy using the reticle distortion correction for EPL technologies

Ion Projection Lithography: Progress of European MEDEA & International Program

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