2000
DOI: 10.1016/s0167-9317(00)00263-x
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Ion Projection Lithography: Progress of European MEDEA & International Program

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Cited by 15 publications
(6 citation statements)
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“…However, the ion optics still remains as a major challenge since an entire image has to be projected with minimum distortion and focused over the entire field at the same time. Moreover, the new development and the latest applications of the ion beam projection technology have been thoroughly reviewed recently (Melngailis et al 1998, Kaesmaier andLoschner 2000). Thus, in this review, only the milling technology will be examined.…”
Section: Introductionmentioning
confidence: 99%
“…However, the ion optics still remains as a major challenge since an entire image has to be projected with minimum distortion and focused over the entire field at the same time. Moreover, the new development and the latest applications of the ion beam projection technology have been thoroughly reviewed recently (Melngailis et al 1998, Kaesmaier andLoschner 2000). Thus, in this review, only the milling technology will be examined.…”
Section: Introductionmentioning
confidence: 99%
“…A new look at previously obtained experimental results and simulation models applicable in IBL is a necessary task due to the progress in the development of IBL tools (Kaesmaier & Löschner, 2000) and their applications concerning exposure of one-component resist PMMA (Miller, 1989;Mladenov et al, 2001) as well as multi-component resists including chemically amplified resists (CARs) (Hirscher et al, 2001). The simulation tools for sub-150 nm ion beam lithography require more adequate models of the ion scattering, the energy losses and the development process.…”
Section: Exposure Process Simulation At Ion Beam Lithography (Ibl)mentioning
confidence: 99%
“…This is the most promising technique among the three and has been extensively investigated over the past few decades. [99][100][101][102][103] In studies similar to those been done in X-ray lithography, [78,79] Murase and coworkers compared the e-beam and ion-beam sensitivities of a variety of resists. [104] A strong correlation was found for both positive and negative systems when compared with the results from X-ray lithography.…”
Section: Ion-beam Lithographymentioning
confidence: 99%