Modeling of the multilevel conduction characteristics and fatigue profile of Ag/La1/3Ca2/3MnO3/Pt structures using a compact memristive approach

Abstract

The hysteretic conduction characteristics and fatigue profile of La 1/3 Ca 2/3 MnO 3 (LCMO)-based memristive devices were investigated. The oxide films were grown by pulsed laser deposition (PLD) and sandwiched between Ag and Pt electrodes. The devices exhibit bipolar resistive switching (RS) effect with well-defined intermediate conduction states that arise from partial SET and RESET events. The current-voltage curves are modeled and simulated using a compact memristive approach. Two equations are considered: one for the electron transport based on the double-diode equation and the other for the memory state of the device driven by the play operator with logistic ridge functions. An expression that accounts for the remnant resistance of the device is obtained after simplifying the model equations in the low-voltage limit. The role played by the power dissipation in the LCMO reset dynamics as well as the asymmetrical reduction of the resistance window caused by long trains of switching pulses are discussed.

Application of the Quasi-Static Memdiode Model in Cross-Point Arrays for Large Dataset Pattern Recognition

“…In particular, Fig. 3 [47] and TaO x [48] structures at room temperature under DC voltage sweeps. The experimental data were fitted by the SPICE model depicted in Table 1 based on Eqs.…”

“…Exp. [48] QMM FIGURE 3: Experimental I-V loops of different materials reported in the literature fitted with the QMM model: (a) HfO2 [43], (b) Al2O3 [44], (c) MnO3 [45], (d) CuO2 [46], (e) La 1-x CaxMnO3 [47] and (f) TaOX [48]. The QMM fitting parameters are shown for each case.…”

Assessment and Improvement of the Pattern Recognition Performance of Memdiode-Based Cross-Point Arrays with Randomly Distributed Stuck-at-Faults

“…The overestimation of I HRS may occur when considering a linear model [29] for the HRS regime, and lower applied voltages as indicated by the cyan, blue and black ball markers. (b) Experimental I-V loops of different materials reported in the literature, fitted with the QMM model: HfO 2 [64] and LMCO [65].…”

“…Fowler-Nordheim, Poole-Frenkel, or space-limited charge can be considered for the conduction mechanism through the pristine dielectric, but in this paper an ohmic I-V relationship was assumed for simplicity (see Figure 2a). The accuracy of the model is illustrated in Figure 2b by fitting experimental data corresponding to HfO 2 [64] and LCMO [65] structures measured at room temperature (details of these samples can be found in Section S1.1 of the Supplementary Materials).…”

Key Role of Oxygen-Vacancy Electromigration in the Memristive Response of Ferroelectric Devices

“…To test the consistency of our modeling, we notice that the maximum depolarizing field reached in the simulations is lower than the PZT device coercive field (E DP ≈ 3.9 MV/m < E C ≈ 6.3 MV/m), in order to describe a realistic situation where no strong sample depolarization takes place, as initially assumed. In addition, we recall that for perovskites with memristive mechanisms based solely on oxygen-vacancy electromigration, set and reset events are reported to be triggered by nominal electrical fields [defined as V set(reset) /d, with d being the separation between electrodes] ranging from approximately equal to 1 kV/m (ceramic manganite samples with contacts separated by a few mm) [65] to approximately equal to 10 MV/m (outof-plane devices based on 100 nm manganite thin films) [66]. The E DP we estimate for the modeling of the PZT system (approximately equal to 3.9 MV/m) is close to the upper limit of the mentioned range.…”