Modeling of MOS-Side Carrier Injection in Trench-Gate IGBTs

Lu, L.; Chen, Z.; Bryant, A.T.; Santi, Enrico; Hudgins, J.L.; Palmer, P.R.

doi:10.1109/tia.2009.2039770

Cited by 7 publications

(2 citation statements)

References 18 publications

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“…Therefore, the Miller capacitance becomes larger than those in previous generations of IGBTs, which can be seen from the V-series IGBT datasheet. Therefore, an improved solution is possibly to take into account the 2D dimensional effects, following the work in [17]. Adding the C GC correction factor as above will assist in capturing the behaviour without resort to further complexity, again avoiding use of the manufacturer's geometric design.…”

Section: Discussionmentioning

confidence: 99%

“…4 by analysing its simulation results from Silvaco ATLAS. For trench gate IGBTs, the growth of the depletion region might follow a similar pattern, for both devices, as soon as the collector voltage has risen above a few tens of voltages [17]. However, the effect on the capacitances will be quite different early in the switching process, because of the different orientation of the MOS channel and the behaviour of the stored charge under the gate.…”

Section: Igbt Physical Modelmentioning

confidence: 99%

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Physics‐based insulated‐gate bipolar transistor model with input capacitance correction

Yang¹,

Otsuki

Palmer³

2015

IET Power Electronics

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IGBT terminal capacitances play an important role in IGBT switching transients. The terminal capacitance modelling, particularly Miller capacitance modelling, is a difficult task due to their operating-point-dependent characteristics. Previously, for the planar gate IGBT, the Miller capacitance's voltage dependency is modelled by considering the depletion region growth pattern. For modern trench gate design, however, there is no similar dynamic process available. Also, its current dependency needs to be taken account of. This paper presents an improved IGBT physics-based model with proper terminal capacitance correction. By comparison of experimental and simulation results, the proposed model works brilliantly for different types of IGBTs (including the state-of-art trench-gate field-stop type) over a wide range of operating conditions.

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Section: Discussionmentioning

confidence: 99%

Section: Igbt Physical Modelmentioning

confidence: 99%

Physics‐based insulated‐gate bipolar transistor model with input capacitance correction

Yang¹,

Otsuki

Palmer³

2015

IET Power Electronics

View full text Add to dashboard Cite

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Physics‐based model of LPT CSTBT including MOS‐side two‐dimensional effects

Xue

2016

IET Power Electronics

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In this study, a physics-based model for light punch through (LPT) carrier stored trench bipolar transistor (CSTBT) is developed. The model is based on the Fourier series solution of ambipolar diffusion equation implemented in MATLAB and Simulink. In the model, the MOS-side two-dimensional (2D) effects resulting from trench gate and carrier storage layer are studied analytically. Assuming high-level injection in LPT buffer layer, the model also describes the carrier transport, redistribution and recombination in the buffer layer in details. The static and transient experiments for a commercial CSTBT are used to validate the presented model. The simulation results are compared with experiment results and good agreement is obtained.

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