Physics‐based insulated‐gate bipolar transistor model with input capacitance correction

Abstract

IGBT terminal capacitances play an important role in IGBT switching transients. The terminal capacitance modelling, particularly Miller capacitance modelling, is a difficult task due to their operating-point-dependent characteristics. Previously, for the planar gate IGBT, the Miller capacitance's voltage dependency is modelled by considering the depletion region growth pattern. For modern trench gate design, however, there is no similar dynamic process available. Also, its current dependency needs to be taken account of. This paper presents an improved IGBT physics-based model with proper terminal capacitance correction. By comparison of experimental and simulation results, the proposed model works brilliantly for different types of IGBTs (including the state-of-art trench-gate field-stop type) over a wide range of operating conditions.

Robust Stability Analysis of Active Voltage Control for High-power IGBT Switching by Kharitonov's Theorem

“…To obtain suitable values at normal room temperature 20ºC , an accurate IGBT physical model-the Palmer-Bryant IGBT model [7,13]-was used to extract a reasonably satisfactory degree of parameter accuracy [3,[6][7]. The parameters are listed in Table II.…”

“…Here we took two steps to obtain the parameters. First, we used the parameter extraction process for the IGBT model described [7] and then applied the equations to obtain C O in [13] to obtain the values for the three different operating points. …”

An Excess Carrier Lifetime Extraction Method for Physics-based IGBT Models

“…In recent years, the characterization and modeling of insulated gate bipolar transistors (IGBTs) have been greatly improved [1]- [6]. In particular, the physics-based models for non-punch-through (NPT), punch-through (PT), and field-stop (FS) IGBTs have become increasingly accurate.…”

Modelling of high‐power IGBT module short‐circuit operation and current distribution by a behavioural model

“…However, there are methods to model semiconductor SC behaviour as part of a certain electric circuit, yet these methods require detailed information of the semiconductor model parameters (e.g. [1][2][3][4][5]), which is usually not easily available for a design engineer, or requires experimental tests. On the other hand, in the design process of a power electronic inverter, the target is to model a complete circuit rather than single components.…”

“…In the literature, there are various models and methods to describe the insulated-gate bipolar transistor (IGBT) module behaviour (see e.g. [5,[12][13][14][15][16][17][18][19]). They can be roughly divided into two groups: behavioural and physics-based models.…”