Modeling finger number dependence on RF noise to 10 GHz in 0.13 μm node MOSFETs with 80nm gate length

Low Noise and High Gain RF MOSFETs on Plastic Substrates

“…The excellent results for RF MOSFETs on plastic, with or without tensile strain, are comparable with the best published data [13]- [14]. These very low NF min (0.96-1.2 dB) and high associated gain (14.1-12.8 dB) 0.18 µm MOSFETs on plastic, are suitable for UWB applications.…”

“…The 30 µm thick Si RF MOSFETs on plastic showed low minimum noise figure (NF min ) of 1.2 dB and high associated gain, 12.8 dB, at 10 GHz. This excellent RF performance on plastic is comparable with that on standard Si substrates [13]- [14]. Further improvement to 0.96 dB NF min and 14.1 dB associated gain at 10 GHz is obtained under applied tensile strain [15], using flexible Si (30 µm thick) on plastic.…”

“…The multiple-gate-finger (6, 16, and 32) 0.18 µm MOSFETs were designed to reduce the gate-resistance-generated thermal noise [13]- [14], which is traded-off by the increase in DC power consumption. The Si substrate of the fabricated MOSFETs was thinned down from 300 µm (6 mil) to 30 µm, using Inductive-Coupled Plasma (ICP) dry etching followed by wet chemical etching.…”

DC-RF Performance Improvement for Strained 0.13 μm MOSFETs mounted on a Flexible Plastic Substrate

“…The major technology challenges for Si RF ICs compared with their Ill-V counterparts are the lower performance of the active RF transistors [1]- [8], and large loss and noise from the passive devices [9]- [13]. One method to overcome the large RF loss from the passive devices is to integrate RF ICs on insulating plastic.…”

High performance metal-gate/high-/spl kappa/ MOSFETs and GaAs compatible RF passive devices on Ge-on-insulator technology

“…MOSFET not only has a lower drive current but also gives a poorer RF gain and operation speed. �l1n MOSFETs (La-gO nm) [11]- [12]. The mobility degradation decreases the curr ent gain (H21) and unity-cut-off fre quency ifT)' Such degraded RF perfonmmcc is contradictory to the scaling trend where continuously improving device perfonnance is required.…”