High performance metal-gate/high-/spl kappa/ MOSFETs and GaAs compatible RF passive devices on Ge-on-insulator technology

Abstract

We propose and demonstrate a new VLSI structure using high perfonnance metal-gatefh.igh-K MOSFETs and high-Q RF passive devices on Ge-on-Insulator (G01) platfonn. In additional to high RF perfonnance passive devices on insulating Si fo nned by ion implantation, the metal-gate/(La)AI03/GOI MOSFETs have 1.7-2.0X improved electron and hole mobility with the merits of Ihinimizing interfacial reaction, high-K crystallization, Fenlli-Ievel pinning, and impurity diffusion due to low thennal budget of 500°C RTA