Modeling a-Si:H p–i–n solar cells with the defect pool model

Klimovsky, E.; Rath, J.K.; Schropp, R.E.I.; Rubinelli, Francisco Alberto

doi:10.1016/j.jnoncrysol.2004.03.064

Cited by 7 publications

(20 citation statements)

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“…They refer to some additional physics integrated in order to improve the characterization and design of single and multiple solar cells of amorphous, microcrystalline, and crystalline silicon. For instance we can mention the inclusion of amphoteric states, 17 the Pool-Frenkel model, 18 the defect pool model, 19,20 direct tunneling at constant energy, 21 recombination tunnelling, 18 gap and doping continuous grading, light scattering at rough surfaces, light interference, 22 etc. The density of states ͑DOS͒ in a-Si: H and in c-Si: H is described by two exponential tails and by three Gaussian distributions recognized with the symbols D − , D o , and D + .…”

Section: Introductionmentioning

confidence: 99%

“…Tails host single donorlike and acceptorlike states and Gaussian host bivalent states. 14,16,17,19,20 Since there is not yet a clear picture available for the distribution of energy offsets they were equally split between the conduction and the valence bands. 19,20 Contact effects will not be discussed in this paper.…”

Section: Introductionmentioning

confidence: 99%

“…The electrical parameters adopted in our simulations resulted from extensive fittings of experimental characteristic curves ͑J-V and SR͒ of a-Si: H p-i-n, c-Si: H p-i-n, and a-Si: H / a-Si: H p-i-n / p-i-n solar cells. 14,[18][19][20]23 The most relevant electrical parameters used for the a-Si: H and c-Si: H intrinsic layers are listed in Table I. They correspond to materials grown with the hot wire chemical vapor deposition ͑HWCVD͒ technique ͑see Sec.…”

Section: Introductionmentioning

confidence: 99%

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Exploring dark current voltage characteristics of micromorph silicon tandem cells with computer simulations

Sturiale

Li²,

Rath³

et al. 2009

Journal of Applied Physics

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The transport mechanisms controlling the forward dark current-voltage characteristic of the silicon micromorph tandem solar cell were investigated with numerical modeling techniques. The dark current-voltage characteristics of the micromorph tandem structure at forward voltages show three regions: two with an exponential dependence and a third where the current grows more slowly with the applied voltage. In the first exponential region the current is entirely controlled by recombination through gap states of the top cell. In the second exponential region the current is controlled by the mixture of recombination through gap states of both the top and bottom cells and by free carrier diffusion along the a-Si: H intrinsic layer. In the third region the onset of the electron space charge limited current on the a-Si: H top cell can be observed along with some other mechanisms that are discussed in the paper. The high forward dark J-V curve of the tandem cell can be used as diagnosis tool to quickly inspect the efficiency of the recombination junction in recombining the electron-hole pairs generated under illumination in the top and bottom cells. The dark current at high forward voltages is highly influenced by the amount of electron-hole pairs thermally generated inside the recombination junction.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Exploring dark current voltage characteristics of micromorph silicon tandem cells with computer simulations

Sturiale

Li²,

Rath³

et al. 2009

Journal of Applied Physics

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show abstract

“…Our simulations were performed with the computer code D-AMPS [6]. Electrical and optical parameters have been carefully selected from the experimental data and from the extensive efforts of fittings performed on single a-Si [6] and lc-Si [7] p-i-n junctions and in a-Si/a-Si tandem structures [8].…”

Section: Modelingmentioning

confidence: 99%

“…Electrical and optical parameters have been carefully selected from the experimental data and from the extensive efforts of fittings performed on single a-Si [6] and lc-Si [7] p-i-n junctions and in a-Si/a-Si tandem structures [8]. We mostly investigated the dark SR characteristics of a-Si/lc-Si tandem cells focusing our work in reproducing the observed experimental trends.…”

Section: Modelingmentioning

confidence: 99%