Sensitivity of the dark spectral response of thin film silicon based tandem solar cells on the defective regions in the intrinsic layers

The study of a new n/p tunnel recombination junction and its application in a-Si:H/μc-Si:H tandem solar cells

“…4(a) that when pure a-Si:H n-layer is used, QE measured in dark condition (without bias light) follows the response of the sub-cell with the lowest current at each wavelength, showing nearly a triangular shape, when µc-Si:H n-layer is used, a departure of lowest spectral response in the long wavelength range (> 600 nm) is observed, while in the short wavelength it is in accord with the response of the bottom cell. As discussed by Loffler [18] and Rubinelli, [21] this indicates that there is apparent current leakage of the top cell because of an inefficiency blocking the current generated in bottom cell by the top cell. Implementing a thin n-a-Si:H layer between the a-Si:H i-layer and µc-Si:H n-layer, decreasing the thickness of the µc-Si:H n-layer at the same time, we find that the current leakage effect becomes smaller (Figs.…”

Nanocrystalline thin film silicon solar cells: A deeper look into p/i interface formation

“…5b support this observation. There is a decrease in the EQE in the entire spectral range, which indicates that carrier recombination is occurring mainly at the defective p/i interface [42], [43].…”

Enhanced recovery of light-induced degradation on the micromorph solar cells by electric field

“…The low V oc in our cells might be due to the leakage paths to increase the dark current of the top cell. 12,13 If the leakage paths in top cell can be eliminated and the optimized tunneling recombination junction (TRJ) layer is adopted, higher V oc can be obtained. 14,15 The initial efficiency of the single-junction a-Si cells used in this work was around 9.8% with a V oc of 0.91 V, a J sc of 14.7 mA/cm 2 , and a FF of 74%.…”