MOCVD growth and study of magnetic Co films

Abstract

The Co(N'acN'ac) 2 complex, namely bis(2-methylamino-4-methyliminato-penten) cobalt(II), was for the first time used as a precursor for producing Co films via metal-organic chemical vapour deposition. This chelate exhibits good volatility ln (P/Pu)526?45-14006?7/T(K) at moderate temperature values (382-427 K). Co films were grown on Si (100) substrates and studied by Xray diffraction, extended X-ray absorption fine structure, atomic force and scanning electron microscopy, energy dispersive X-ray analysis and optical profilometry. Deposition conditions corresponding to the optimal electrical and magnetic characteristics of Co thin films are found.

Editors' Choice—Review—Cobalt Thin Films: Trends in Processing Technologies and Emerging Applications

“…Within the text of this review, the identification numbers listed in Table II appear next to the precursor name used, and track to Chemical Abstract Systems (CAS) registration numbers. Table III presents a summary of recent MOCVD and ALD Co modeling and mechanistic studies, [5][6][7] while Table IV contains a synopsis of recent thermal MOCVD Co reports; [8][9][10][14][15][16][17][18][19][29][30][31][32][33][34] Table V provides summaries of recent pulsed thermal MOCVD and plasma and thermal ALD studies, 20,26,[35][36][37][38][39][40][41][42][43][44][45][46][47][48][49][50][51][52][53][54] and Table VI gives an outline of recent area-selective ALD work. 26,51,[55][56][57]…”

“…These commercial usages have spawned tremendous interest not only in optimizing and understanding Co film growth processes and resulting properties, but also in expanding their use in future IC products. Other uses of metallic cobalt and cobalt containing films (such as oxides, sulfides, silicides and nitrides) include magneto-optic recording media, 14 data storage, 15,16 sensor technologies, 15,[17][18][19] catalysts for growing carbon nanotubes and self-aligned nanowires, 15,18,19 reflective thin films for optical devices 17 and, more broadly, as antibacterial, 18,19 decorative, protective 17 and wear-resistant coatings. 20 Given cobalt's increasing potential to continue enabling exciting innovations across numerous industrial sectors, this article presents an overview of recent advancements in Co vapor phase processing techniques and their impact on film physical, chemical and electrical properties.…”

Cobalt Metal ALD: Understanding the Mechanism and Role of Zinc Alkyl Precursors as Reductants for Low-Resistivity Co Thin Films

“…Among the Co thin film fabrication methods relevant for microelectronic device processing, chemical vapor deposition (CVD)-based processes have acquired a predominant role at and beyond the 10 nm node . Conventional CVD processes for which a broad variety of metal–organic complexes and chemistries have been investigated − are, however, at a disadvantage when compared with atomic layer deposition (ALD) processes: Often ALD outperforms CVD in terms of subnanometer thickness control, film conformality and uniformity over topographically, and demanding substrate geometries. , These benefits are due to ALD capitalizing on alternating and temporally separated self-limiting surface reactions of more than one precursor with a substrate surface so that the desired thin film material is (ideally) grown monolayer by monolayer. , Arguably, the choice of suitable precursors is of utmost importance as their specific reactivity toward substrate surfaces and coreactants dictates the potential success of an ALD process.…”