Editors' Choice—Review—Cobalt Thin Films: Trends in Processing Technologies and Emerging Applications

Kaloyeros, Alain E.; Pan, Yang; Goff, Jonathan; Arkles, Barry

doi:10.1149/2.0051902jss

Cited by 60 publications

(46 citation statements)

References 84 publications

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“…The deposition of Co thin film using a CoCp2 precursor has been demonstrated experimentally. 6,18,[38][39] In plasma ALD studies, the co-reactants are NH3 plasma or a mixture of N2 and H2 plasma.…”

Section: Discussionmentioning

confidence: 99%

Reaction Mechanism of the Metal Precursor Pulse in Plasma-Enhanced Atomic Layer Deposition of Cobalt and the Role of Surface Facets

Liu

Zhang

et al. 2020

J. Phys. Chem. C

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Cobalt is a potential candidate in replacing copper for interconnects and has been applied in the trenches and vias in semiconductor industry. A non-oxidizing reactant is required in plasmaenhanced atomic layer deposition (PE-ALD) of thin films of metals to avoid O-contamination. PE-ALD of Co has been demonstrated experimentally, but the growth mechanism and key reactions are not clear. In this paper, the reaction mechanism of metal cyclopentadienyl (Cp, C5H5) precursors (CoCp2) and NHx-terminated Co surface is studied by density functional theory (DFT) calculations. The Cp ligands are eliminated by CpH formation via a hydrogen transfer step and desorb from metal surface. The surface facet plays an important role in the reaction energies and activation barriers. The results show that on the NHx-terminated surfaces corresponding to ALD operating condition (temperature range 550K to 650K), the two Cp ligands are eliminated completely on Co(100) surface during the metal precursor pulse, resulting in Co atom deposited on the Co(100) surface. But the second Cp ligand reaction of hydrogen transfer is thermodynamically unfavourable on the Co(001) surface, resulting in CoCp fragment termination on Co(001) surface. The final terminations after metal precursor pulse are 3.03 CoCp/nm 2 on NHxterminated Co(001) surface and 3.33 Co/nm 2 on NHx-terminated Co(100) surface. These final structures after metal precursor pulse are essential to model the reaction during the following Nplasma step.

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Section: Discussionmentioning

confidence: 99%

Reaction Mechanism of the Metal Precursor Pulse in Plasma-Enhanced Atomic Layer Deposition of Cobalt and the Role of Surface Facets

Liu

Zhang

et al. 2020

J. Phys. Chem. C

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“…2 Due to its low resistivity and high chemical stability, Ru is a leading candidates in replacing Cu for interconnects and has been applied as metallization in interconnects or a seed layer for copper interconnects. [3][4][5] In addition, Ru can be applied in other device applications, including the gate metal for semiconductor transistors and the electrode material in dynamic random access memory (DRAM) devices. 6 For the deposition of metal thin films on the high aspect ratio structures typically present in nanoscale devices, atomic layer deposition (ALD) is the only approach that allows conformal deposition and control of growth at the atomic level.…”

mentioning

confidence: 99%

Reactions of ruthenium cyclopentadienyl precursor in the metal precursor pulse of Ru atomic layer deposition

et al. 2021

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“…In the 10Al alloy, the needle-shaped precipitates are assumed to be only on the Cu-rich domain, as observed in Figure 3b. The shear modulus of the Cu-rich phase in the 10Al alloy is determined by the rule of mixtures involving the constituent elements in Table 1 [45][46][47]. The lattice parameters of the Cu-rich phase in the 10Al (0.363 nm) and 15Al (0.365 nm) alloys were obtained from the XRD measurement in Figure 2.…”

Section: Discussionmentioning

confidence: 99%

Novel Co-Cu-Based Immiscible Medium-Entropy Alloys with Promising Mechanical Properties

Son

Moon

Kwon

et al. 2021

Metals

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New AlxCo50−xCu50−xMnx (x = 2.5, 10, and 15 atomic %, at%) immiscible medium-entropy alloys (IMMEAs) were designed based on the cobalt-copper binary system. Aluminum, a strong B2 phase former, was added to enhance yield strength and ultimate tensile strength, while manganese was added for additional solid solution strengthening. In this work, the microstructural evolution and mechanical properties of the designed Al-Co-Cu-Mn system are examined. The alloys exhibit phase separation into dual face-centered cubic (FCC) phases due to the miscibility gap of the cobalt-copper binary system with the formation of CoAl-rich B2 phases. The hard B2 phases significantly contribute to the strength of the alloys, whereas the dual FCC phases contribute to elongation mitigating brittle fracture. Consequently, analysis of the Al-Co-Cu-Mn B2-strengthened IMMEAs suggest that the new alloy design methodology results in a good combination of strength and ductility.

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Editors' Choice—Review—Cobalt Thin Films: Trends in Processing Technologies and Emerging Applications

Cited by 60 publications

References 84 publications

Reaction Mechanism of the Metal Precursor Pulse in Plasma-Enhanced Atomic Layer Deposition of Cobalt and the Role of Surface Facets

Reaction Mechanism of the Metal Precursor Pulse in Plasma-Enhanced Atomic Layer Deposition of Cobalt and the Role of Surface Facets

Reactions of ruthenium cyclopentadienyl precursor in the metal precursor pulse of Ru atomic layer deposition

Novel Co-Cu-Based Immiscible Medium-Entropy Alloys with Promising Mechanical Properties

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