Mobility in graphene double gate field effect transistors

Lemme, Max C.; Echtermeyer, T. J.; Baus, M.; Szafranek, B. N.; Bolten, Jens; Schmidt, Manuel; Wahlbrink, T.; Kurz, H.

doi:10.1016/j.sse.2007.10.054

Cited by 106 publications

(87 citation statements)

References 23 publications

(30 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Additional impurities influence the mobility in the device negatively. 39 Hence, a direct comparison between contact resistance and mobility extracted by TML and Hall measurements and from a top gated transistor would not be fully correct. …”

Section: B Discussionmentioning

confidence: 99%

Effect of oxide traps on channel transport characteristics in graphene field effect transistors

Bonmann

Vorobiev

Stake

et al. 2017

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

View full text Add to dashboard Cite

A semiempirical model describing the influence of interface states on characteristics of gate capacitance and drain resistance versus gate voltage of top gated graphene field effect transistors is presented. By fitting our model to measurements of capacitance–voltage characteristics and relating the applied gate voltage to the Fermi level position, the interface state density is found. Knowing the interface state density allows us to fit our model to measured drain resistance–gate voltage characteristics. The extracted values of mobility and residual charge carrier concentration are compared with corresponding results from a commonly accepted model which neglects the effect of interface states. The authors show that mobility and residual charge carrier concentration differ significantly, if interface states are neglected. Furthermore, our approach allows us to investigate in detail how uncertainties in material parameters like the Fermi velocity and contact resistance influence the extracted values of interface state density, mobility, and residual charge carrier concentration.

show abstract

Section: B Discussionmentioning

confidence: 99%

Effect of oxide traps on channel transport characteristics in graphene field effect transistors

Bonmann

Vorobiev

Stake

et al. 2017

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

View full text Add to dashboard Cite

show abstract

“…However, in most graphene-based heterostructures, SLG must be physically supported by an insulating dielectric substrate such as SiO 2 , and the carrier mobility in such structures is about one order of magnitude lower [1] as a result of scattering with impurities, defects, and surface roughness. This reduction in carrier mobility can be further exacerbated when a top gate, consisting of a layer of high-κ dielectric material such as HfO 2 or Al 2 O 3 overlayed with metal, is deposited on SLG [2][3][4].…”

mentioning

confidence: 99%

“…[12]) on SLG can lead to a weakening of the Coulombic scattering forces and can lead to an improvement in the conductivity (although Ponomarenko and co- * Electronic address: zhunyong.ong@utdallas.edu † Electronic address: max.fischetti@utdallas.edu workers using a high-κ liquid overlayer were not able find any significant improvement [13]). The deposition of dielectric films, such as HfO 2 or Al 2 O 3 , on graphene has been found to lead to the degradation of electron mobility [2,14]. This has been attributed to the roughening of the graphene surface.…”

mentioning

confidence: 99%

Charged impurity scattering in top-gated graphene nanostructures

Ong

Fischetti

2012

Phys. Rev. B

View full text Add to dashboard Cite

We study charged impurity scattering and static screening in a top-gated substrate-supported graphene nanostructure. Our model describes how boundary conditions can be incorporated into scattering, sheds light on the dielectric response of these nanostructures, provides insights into the effect of the top gate on impurity scattering, and predicts that the carrier mobility in such graphene heterostructures decreases with increasing top dielectric thickness and higher carrier density. An increase of up to almost 60 percent in carrier mobility in ultrathin top-gated graphene is predicted.

show abstract

“…Graphene is a single layer of carbon atoms arranged in two dimensional lattice in hexagonal manner, the graphene happens to be chemically inactive and posses high strength [2]. The existence of several novel properties like its extremely high electronic mobility [3,4,5,6], ambipolar characteristics [7,8], high optical transparency [9,10,11,12], high surface to volume ratio [13,14], mechanical strength [15,16], make graphene an exotic material for a wide range of applications.…”

Section: Introductionmentioning

confidence: 99%

“…From the application point of view in electronic industry [3,4,5,6] and in many other structural applications which require composite materials, graphene can be seen as a vital reinforcing component [13]. Tremendous amount of research has been concentrated towards the development of the low cost and feasible synthesis routes for better quality and uniform graphene sheet with monolayer structure.…”

Section: Introductionmentioning

confidence: 99%

Cold Wall CVD (CWCVD) in the Synthesis of Few Layered Graphene on Ni

Faisal¹,

Bhattacharyya²,

Jha³

et al. 2017

Preprint

View full text Add to dashboard Cite

Abstract:We report the growth of graphene at a low temperature using the cold wall chemical vapor deposition technique (CWCVD). Few layered (~6-8 layers) graphene were grown on nickel-coated silicon with acetylene as the precursor gas. The advantage of the combination of the acetylene (as a carbon feedstock) and the nickel catalyst was the lowering of the graphene growth temperature. Nickel coated silicon samples were pre-treated (heat treatment in inert atmosphere) before the growth and the effect of the pre-treatment on the catalyst as well as on the grown film was studied. The final samples were characterized with scanning electron microscopy and Raman spectroscopy. In CWCVD route, the heating of only the substrate holder enabled high heating and cooling rates, which, along with the control over partial pressure of the precursor gas had profound effect on the formation of graphene. In the best sample we have achieved almost equal intensity of the G and 2D peaks in Raman spectrum, which implied about ~6-8 layers of Graphene. The defect peak (the D band) was extremely small in the sample and it was attributed to the ripples and the underlying roughness of the nickel film. We analyzed that a proper choice of the thickness of catalyst layer and a higher cooling rate after graphene growth it would be possible to obtain monolayered graphene. Similar samples grown in a normal atmospheric CVD (with some engineered design to promote fast cooling) were also compared with the cold wall CVD grown samples and plasma assisted CWCVD, and cold-wall CVD demonstrated a better control over the quality of graphene film through the fast cooling and a controlled partial pressure of the precursor gas.

show abstract

Mobility in graphene double gate field effect transistors

Cited by 106 publications

References 23 publications

Effect of oxide traps on channel transport characteristics in graphene field effect transistors

Effect of oxide traps on channel transport characteristics in graphene field effect transistors

Charged impurity scattering in top-gated graphene nanostructures

Cold Wall CVD (CWCVD) in the Synthesis of Few Layered Graphene on Ni

Contact Info

Product

Resources

About