Mobility evaluation in transistors with charge-trapping gate dielectrics

Abstract

Physical model for frequency-dependent dynamic charge trapping in metal-oxide-semiconductor field effect transistors with Hf O 2 gate dielectric Appl. Phys. Lett. 86, 093510 (2005); 10.1063/1.1874312Trap evaluations of metal/oxide/silicon field-effect transistors with high-k gate dielectric using charge pumping method Appl.Evaluation of grain boundary trap states in polycrystalline-silicon thin-film transistors by mobility and capacitance measurements

The Pulsed Id-Vgmethodology and Its Application to the Electron Trapping Characterization of High-κ gate Dielectrics

“…Using pulsed I d -time [30,33,73,83] or a correction technique for pulsed I d -V g can circumvent the issues discussed in section IV [81]. In the case of I d -time, very fast rise and fall times can be used since propagation delay is not an issue.…”

“…5) as well, confirming the hysteresis is not real. Therefore, estimating ΔV t as a shift between I d -V g traces corresponding to the rise and fall of the pulse bias may not be accurate [70,83,84] when a non-optimized measurement set-up is used.…”

“…3(a). A precise expression for ΔV t , which takes into account variation of the mobility value with changing threshold voltage, is given in [83]. With this extraction procedure for ΔV t , the onset of FTCE can be evaluated [33].…”

“…The degradation in I d with time is reflected in the fast transient charge trapping. The threshold voltage shift, ΔV t , can be determined from the change in I d through the expression [83,91] ( )…”

Issues with the electrical characterization of graphene devices

“…In high-k dielectric development, fast pulse I-V could be used to minimize the influence of the charge trapping in a high-k dielectric because the charge trapping took on the order of μsec. If the test can be completed before the charge can accumulate within a high-k dielectric, an intrinsic I-V curve can be obtained [28,29]. There is no clear understanding on how an intrinsic I-V curve can be obtained from hysteretic I-V curves of graphene.…”