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An ultra-short pulse current–voltage (I–V) measurement technique has been applied to high-κ gate transistors to investigate the effects of fast transient charging. It is shown that the fast electron trapping may contribute to the degradation of transistor performance (i.e., low mobility) observed with direct current (DC) characterization methods, as well as pulse techniques in the tens of microseconds range and above. In particular, in the samples with significant electron trapping, the drain current in the saturation regime is shown to improve by up to 40% from its DC values when the characterization is performed with pulse I–V measurements in the nanosecond range.

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Physical model for frequency-dependent dynamic charge trapping in metal-oxide-semiconductor field effect transistors with Hf O 2 gate dielectric Appl. Phys. Lett. 86, 093510 (2005); 10.1063/1.1874312Trap evaluations of metal/oxide/silicon field-effect transistors with high-k gate dielectric using charge pumping method Appl.Evaluation of grain boundary trap states in polycrystalline-silicon thin-film transistors by mobility and capacitance measurements

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