Abstract:An ultra-short pulse current–voltage (I–V) measurement technique has been applied to high-κ gate transistors to investigate the effects of fast transient charging. It is shown that the fast electron trapping may contribute to the degradation of transistor performance (i.e., low mobility) observed with direct current (DC) characterization methods, as well as pulse techniques in the tens of microseconds range and above. In particular, in the samples with significant electron trapping, the drain current in the sa… Show more
“…3(a)), the pulsed I-V methodology was introduced to quantify the transient charge trapping as well as to measure "intrinsic" (i.e., trapping-free) device characteristics [30,[70][71][72]. …”
Section: Fast Transient Charge Trappingmentioning
confidence: 99%
“…3(a)), which generates a complete I d -V g curve within the total "single" pulse V g range by applying multiple pulses with incrementally rising amplitude V g up to V g = V g,max and extracting I d at each V g value (Fig. 3(c)) [33,72]. The advantage of this approach is that each pulse can have a very short characteristic time (around 37 ns = rise time + pulse width with ~0.1% duty cycle in this work), allowing "intrinsic" I d values to be obtained.…”
Section: Fast Transient Charge Trappingmentioning
confidence: 99%
“…Four basic test set-up configurations have been employed to execute many of the pulse-based methodologies reported in the literature [30,[70][71][72]. In two of these configurations, the MOSFET is operated in an inverter circuit with a load resistor arranged in two ways: 1) a standard resistor placed in series between V dd and the drain of the MOSFET as shown in Fig.…”
Section: Instrumentation Configurationsmentioning
confidence: 99%
“…4(a) [30], or 2) the 50 Ω environment of a radio frequency (RF) set-up ( Fig. 4(b)) [72]. The third configuration, shown in Fig.…”
Section: Instrumentation Configurationsmentioning
confidence: 99%
“…While significant progress has been made in fabricating high-κ gate stacks with less charge trapping [66][67][68][69], pulse-based characterization techniques [30,[70][71][72][73] remain critically important in understanding charge trapping processes for low power applications, memory cells, etc. This review addresses pulsed currentvoltage (I-V) characterization and analysis approaches.…”
“…3(a)), the pulsed I-V methodology was introduced to quantify the transient charge trapping as well as to measure "intrinsic" (i.e., trapping-free) device characteristics [30,[70][71][72]. …”
Section: Fast Transient Charge Trappingmentioning
confidence: 99%
“…3(a)), which generates a complete I d -V g curve within the total "single" pulse V g range by applying multiple pulses with incrementally rising amplitude V g up to V g = V g,max and extracting I d at each V g value (Fig. 3(c)) [33,72]. The advantage of this approach is that each pulse can have a very short characteristic time (around 37 ns = rise time + pulse width with ~0.1% duty cycle in this work), allowing "intrinsic" I d values to be obtained.…”
Section: Fast Transient Charge Trappingmentioning
confidence: 99%
“…Four basic test set-up configurations have been employed to execute many of the pulse-based methodologies reported in the literature [30,[70][71][72]. In two of these configurations, the MOSFET is operated in an inverter circuit with a load resistor arranged in two ways: 1) a standard resistor placed in series between V dd and the drain of the MOSFET as shown in Fig.…”
Section: Instrumentation Configurationsmentioning
confidence: 99%
“…4(a) [30], or 2) the 50 Ω environment of a radio frequency (RF) set-up ( Fig. 4(b)) [72]. The third configuration, shown in Fig.…”
Section: Instrumentation Configurationsmentioning
confidence: 99%
“…While significant progress has been made in fabricating high-κ gate stacks with less charge trapping [66][67][68][69], pulse-based characterization techniques [30,[70][71][72][73] remain critically important in understanding charge trapping processes for low power applications, memory cells, etc. This review addresses pulsed currentvoltage (I-V) characterization and analysis approaches.…”
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