2005
DOI: 10.1143/jjap.44.2437
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Ultra-Short Pulse Current–Voltage Characterization of the Intrinsic Characteristics of High-κ Devices

Abstract: An ultra-short pulse current–voltage (I–V) measurement technique has been applied to high-κ gate transistors to investigate the effects of fast transient charging. It is shown that the fast electron trapping may contribute to the degradation of transistor performance (i.e., low mobility) observed with direct current (DC) characterization methods, as well as pulse techniques in the tens of microseconds range and above. In particular, in the samples with significant electron trapping, the drain current in the sa… Show more

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Cited by 48 publications
(43 citation statements)
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“…3(a)), the pulsed I-V methodology was introduced to quantify the transient charge trapping as well as to measure "intrinsic" (i.e., trapping-free) device characteristics [30,[70][71][72]. …”
Section: Fast Transient Charge Trappingmentioning
confidence: 99%
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“…3(a)), the pulsed I-V methodology was introduced to quantify the transient charge trapping as well as to measure "intrinsic" (i.e., trapping-free) device characteristics [30,[70][71][72]. …”
Section: Fast Transient Charge Trappingmentioning
confidence: 99%
“…3(a)), which generates a complete I d -V g curve within the total "single" pulse V g range by applying multiple pulses with incrementally rising amplitude V g up to V g = V g,max and extracting I d at each V g value (Fig. 3(c)) [33,72]. The advantage of this approach is that each pulse can have a very short characteristic time (around 37 ns = rise time + pulse width with ~0.1% duty cycle in this work), allowing "intrinsic" I d values to be obtained.…”
Section: Fast Transient Charge Trappingmentioning
confidence: 99%
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