Mobility enhancement in crystalline In-Ga-Zn-oxide with In-rich compositions

Tsutsui, Kazuhiro; Matsubayashi, Daisuke; Ishihara, Noritaka; Takasu, Takako; Matsuda, Shinpei; Yamazaki, Shunpei

doi:10.1063/1.4939039

Cited by 14 publications

(10 citation statements)

References 19 publications

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“…These defects are known to critically impact upon the electrical characteristics of solution-processed metal-oxide devices . To solve this issue, we constructed an ultrathin IZO film with a thickness of 14 nm through multistacking method (see Supporting Information Figure S1). , To optimize the electrical characteristics of IZO films, we used In rich IZO precursor solution and performed a postannealing process for 150 min at 230, 280, 330, and 380 °C, respectively. − Figure a shows the Hall-effect measurements of IZO films for the different postannealing temperatures. The bulk carrier concentration ( N b ) value of the IZO films increased with an increase in postannealing temperatures, whereas the resistivity decreased; this could be attributed to the formation of oxygen vacancy ( V o ) rich IZO films with increased conducting pathways. , Figure b shows the device performances of the IZO TFTs and they were in good agreement with the respective IZO film properties confirmed by the Hall-effect measurements.…”

Section: Resultssupporting

confidence: 65%

Silicon Cations Intermixed Indium Zinc Oxide Interface for High-Performance Thin-Film Transistors Using a Solution Process

Rim

Kim

et al. 2017

ACS Appl. Mater. Interfaces

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Solution-processed amorphous metal-oxide thin-film transistors (TFTs) utilizing an intermixed interface between a metal-oxide semiconductor and a dielectric layer are proposed. In-depth physical characterizations are carried out to verify the existence of the intermixed interface that is inevitably formed by interdiffusion of cations originated from a thermal process. In particular, when indium zinc oxide (IZO) semiconductor and silicon dioxide (SiO) dielectric layer are in contact and thermally processed, a Si intermixed IZO (Si/IZO) interface is created. On the basis of this concept, a high-performance Si/IZO TFT having both a field-effect mobility exceeding 10 cm V s and a on/off current ratio over 10 is successfully demonstrated.

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Section: Resultssupporting

confidence: 65%

Silicon Cations Intermixed Indium Zinc Oxide Interface for High-Performance Thin-Film Transistors Using a Solution Process

Rim

Kim

et al. 2017

ACS Appl. Mater. Interfaces

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“…11 The octahedrons and tetrahedrons can be connected through oxygen at various angles, resulting in numerous possible atomic configurations with significant changes in its electrical properties. For instance, the carrier mobility can vary up to seven times from 10 cm 2 V À1 s À1 to 70 cm 2 V À s À1 12 due to changes in chemical compositions 13,14 or the phase change from amorphous to crystalline. 14,15 Various studies have attempted to predict the diverse phases and analytically determined defect states, such as oxygen vacancies and local disorders of IGZO using density functional theory (DFT).…”

Section: Introductionmentioning

confidence: 99%

“…For instance, the carrier mobility can vary up to seven times from 10 cm 2 V À1 s À1 to 70 cm 2 V À s À1 12 due to changes in chemical compositions 13,14 or the phase change from amorphous to crystalline. 14,15 Various studies have attempted to predict the diverse phases and analytically determined defect states, such as oxygen vacancies and local disorders of IGZO using density functional theory (DFT). [16][17][18] While DFT has proven to be a powerful tool for understanding the electronic structure and properties of materials, it does have some limitations.…”

Section: Introductionmentioning

confidence: 99%

Analytic bond order potential for indium gallium zinc oxide

2023

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“…Alternatively, the use of crystallized films is another approach that could reduce the defect levels in the sub‐conduction band, preserving at the same time the device performance and reliability, as evidenced by the development of c‐axis aligned InGaZnO. [ 71,72 ]…”

Section: Introductionmentioning

confidence: 99%

Films Stoichiometry Effects on the Electronic Transport Properties of Solution‐Processed Yttrium Doped Indium–Zinc Oxide Crystalline Semiconductors for Thin Film Transistor Applications

Afouxenidis

Halcovitch

Milne

et al. 2020

Adv Elect Materials

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backplanes, has fueled the development of metal oxide based semiconductors [1,2] for emerging applications. These can be either crystalline or amorphous, and combine excellent optical properties along with high electron mobility. Another advantage of metal oxides is the ease of engineering their electronic properties, by modifying their composition. The latter has resulted in the realization of multicomponent binary or ternary metal oxides aiming at the control of cationic species and ultimately the reduction of defect states and hence improved electronic transport properties and stability. To this end, several works have reported on the deposition of and metal-oxide-based thin film transistors implementing In 2 O 3 , [3][4][5][6] ZnON, [7][8][9][10] ZnSnO, [11][12][13][14][15][16] InZnO, [17][18][19][20][21][22][23][24] SnGaZnO, [25][26][27] InGaO, [28][29][30][31] ZnInSnO, [32][33][34][35] HfInZnO, [36][37][38][39] ZrInZnO, [40][41][42] and InGaZnO. [1,2,[43][44][45][46][47][48][49][50] While oxide semiconductor materials have been deposited using wellestablished vacuum-based thin films deposition methods such as pulsed laser deposition (PLD), [2,4,51,52] atomic layer deposition, [53][54][55][56][57] chemical vapor deposition, [7,58] and sputtering, [22,23,49,50] solutionbased techniques [19,47,[59][60][61][62][63][64][65][66][67][68][69][70][71][72] have also been employed over a wide range of substrate temperatures and post-deposition annealing conditions.The amorphous phase of metal oxides enables deposition of uniform films and devices over large areas. These amorphous oxide semiconductors are of a strongly ionic structure in which transfer occurs between metal and oxygen atoms; hence, they can exhibit high electron mobility, comparable to that of their crystalline counterparts, when deposited even at room temperature. [40,[61][62][63][64][65] However, voltage-bias stress instability issues, which intensify under illumination, have been reported, limiting the use of the oxide material in a number of applications. Such bias instabilities are known to be due to vacancy ionization, defect creation, and charge trapping, [66][67][68][69] in the TFT channel as well as the interface between the channel and the gate dielectric. [70] This is particularly true for InZnO where high electron mobilities have been reported, but, the increased number of defects generated strongly deteriorate the device stability. A solution to potentially stabilize the defect levels could be doping with a carrier suppressor. However, most of the carrier suppressors adversely Spray-coated crystalline InZnO x -based semiconductors are investigated as a function of [In 3+ ]:[Zn 2+ ] and their performance as TFTs semiconducting channels. More precisely, it is demonstrated that optical, structural, and electron transport properties show a high degree of sensitivity to the films' stoichiometry; that is, the [In 3+ ]:[Zn 2+ ] atomic ratio that equally determines the amorphous or crystalline structure of the film. Yttrium co-doping of InZnO x wit...

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Mobility enhancement in crystalline In-Ga-Zn-oxide with In-rich compositions

Cited by 14 publications

References 19 publications

Silicon Cations Intermixed Indium Zinc Oxide Interface for High-Performance Thin-Film Transistors Using a Solution Process

Silicon Cations Intermixed Indium Zinc Oxide Interface for High-Performance Thin-Film Transistors Using a Solution Process

Analytic bond order potential for indium gallium zinc oxide

Films Stoichiometry Effects on the Electronic Transport Properties of Solution‐Processed Yttrium Doped Indium–Zinc Oxide Crystalline Semiconductors for Thin Film Transistor Applications

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