Mobility Behavior of Ge_1-xSn_xLayers Grown on Silicon-on-Insulator Substrates

Abstract

Organic electroluminescence (EL) devices were fabricated using a bis(2-methyl-8-quinolinato) aluminum hydroxide complex [Al(Mq) 2 OH] as the light-emitting material. The device exhibits bright blue EL at a peak wavelength of 485 nm. A maximum luminance of about 14,000 cd/m 2 can be achieved at a driving current density of 480 mA/cm 2 . The efficiency of the device is about 4.6 cd/A. Possible mechanisms of EL blue shift of Al(Mq) 2 OH with respect to Alq 3 are discussed.

Group IV Direct Band Gap Photonics: Methods, Challenges, and Opportunities

“…However, theoretical studies predict very large electron mobilities as well as hole mobilities of the order of 4500 cm 2 /Vs for direct band gap GeSn (Sau and Cohen, 2007). The first reported experimental mobility study has been done on low Sn content (<6%) indirect band gap GeSn layers yielding a Hall mobility of the order of ~200-300 cm 2 /Vs (Nakatsuka et al, 2010). Slightly better results have been obtained thereafter investigating p-MOSFETs hole channel mobility Wang et al, 2013).…”

Growth and applications of GeSn-related group-IV semiconductor materials

“…The hole concentration increased with the Sn content and reached high values (3 × 10 18 cm −3 ) at x = 0.058, with a mobility of ∼100 cm 2 V −1 s −1 at 300 K [64]. Consequently, we selected the incorporated Sn content to be 2% for SPC [65].…”

Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition

“…GeSn has received many interests in the last 10 years for various applications. [1][2][3] An indirect to direct bandgap transition is theoretically expected for about 10% Sn in GeSn. 4 Sn having about 13% lattice mismatch with Ge, GeSn alloys can offer interesting new routes for stress implementation: (1) tensely biaxial strained Ge layers 5 on GeSn provides a direct bandgap and an enhanced electron mobility with respect to unstrained Ge, (2) compressively biaxial strained GeSn layers grown on Ge can provide a strained quantum well architecture for advanced metal oxide semiconductor field effect transistors, 6 and (3) GeSn can be used moreover as a source/drain stressor materials for advanced Ge pMOSFET technology.…”