MO/Ti bilayer metallization for a self-aligned TiSi2 process

Park, H. K.; Sachitano, J.; Eiden, Gregory C.; Lane, E.; Yamaguchi, Takashi

doi:10.1116/1.572575

Cited by 20 publications

(3 citation statements)

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“…planted Si (19)(20)(21)(22)(23) as well as the effect of ion implantation on the growth (24) and properties (25) of the silicide were studied. Measurements of resistivity (26,27) and dopant behavior during silicide formation (28,29) were made in order to incorporate titanium silicide into VLSI technology (14)(15)(16)(30)(31)(32)(33)(34). The presence of impurities like oxygen (35,36), along with the Chemical bonding and structural aspects of the Ti/Si interface, has been recently examined (37,38).…”

Section: July 1986mentioning

confidence: 99%

Self‐Aligned Ti Silicide Formed by Rapid Thermal Annealing

Brat

Osburn

Finstad

et al. 1986

J. Electrochem. Soc.

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Different aspects of the reaction between Ti and single‐crystal (100) Si are reported when the reaction is thermally activated by rapid thermal annealing. The sheet resistance variation of the TiSix film was measured for a wide range of annealing temperatures, from 400° to 1100°C, in two different atmospheres of high purity Ar and N2 gas, for bare and As‐implanted Si. At temperatures ⩾800°C, the only silicide formed was TiSi2 . Both cross‐sectional TEM and RBS results indicate that the amount of titanium consumed in the reaction depends strongly on the atmosphere used for silicidation. Argon makes possible the reaction of almost the whole Ti layer with silicon, while nitrogen leaves an unreacted layer of about 15 nm, independent of the thickness of the original film. A two‐step anneal is necessary to eliminate bridging in a patterned oxide structure. No difference was observed in the roughness of the external surface whether the samples were annealed in Ar or in N2 . No significant enhanced diffusion of As into Si was observed near the normalSi/TiSi2 interface after RTA in an Ar ambient, while a redistribution of As into the silicide takes place. The As piles up at the TiSi2 surface, from which it evaporates at high temperatures. Results of furnace‐annealed samples in N2 atmosphere show a pile‐up of As at the normalSi/TiSi2 and the TiSi2/normalambient atmosphere interfaces, where it evaporates from the latter, at high temperatures.

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Section: July 1986mentioning

confidence: 99%

Self‐Aligned Ti Silicide Formed by Rapid Thermal Annealing

Brat

Osburn

Finstad

et al. 1986

J. Electrochem. Soc.

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“…For VLSI use, the silicides must possess a wide combination of properties among which the most important is its resistivity. Among the refractory metal silicides, TiSi 2 and CoSi 2 with resistivities in the range of 15-20/~ ohm cm are the best conductors (Nicolet and Lau 1983;Park et al 1984).…”

Section: Introductionmentioning

confidence: 99%

Preparation and characterization of ultra-thin cobalt silicide for VLSI applications

1995

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Ultra-thin cobalt silicide (CoSi I was formed from 10 nm cobalt film by solid phase reaction of Co and Si by use of rapid thermal annealing (RTA). The Ge + ion implantation through Co film caused the interface mixing of the cobalt film with the silicon substrate and resulted in a homogeneous silicide layer. XRD was used to identify the silicide phases that were present in the film. The metallurgical analysis was performed by RBS. XRD and RBS investigations showed that final RTA temperature should not exceed 800' C for thin (< 50 nm) CoSi 2 formation.

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“…The undesired oxidation results in a non-uniform silicide formation and non-uniform etching due to variations in the oxidised Ti surface across a wafer. Park et a1 [7] proposed a Mo/Ti bilayer structure to solve this problem. However, as oxidants may penetrate the top MO layer to react with the bottom Ti layer, it still requires some degree of ambient control.…”

Section: Introductionmentioning

confidence: 99%

Characteristics of titanium silicide formed by Si/Mo/Ti trilayer metallisation

Chiou¹,

Yang²,

Chang³

1989

Semicond. Sci. Technol.

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The Si/Mo/Ti trilayer structure exhibits good oxidation resistance. The tormed titanium silicide possesses a low resistivity of 16pQ cm after annealing for 30 min at 750 "C and good stability for wet and dry oxidation at temperatures above 900 "C. The barrier height of titanium silicides increases slightly as the annealing temperature is raised above 600 "C, and is about 0.6 eV at 750 "C for both the n-type and p-type substrates. With As' (or BF;) ion implantation to increase the surface concentration of n-type (or p-type) substrate, the effective barrier height can be reduced to about 0.4 eV for an implantation dose of 1. 0~ IO" cm-'. By means of As: (or BF;) ion implantation to introduce a thin inversion layer on p-type (or n-type) silicon substrate, the effective barrier height is increased to about 0.9 (or 0.82) eV for a dose of 1 X 10'' cm-'.

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MO/Ti bilayer metallization for a self-aligned TiSi2 process

Cited by 20 publications

References 0 publications

Self‐Aligned Ti Silicide Formed by Rapid Thermal Annealing

Self‐Aligned Ti Silicide Formed by Rapid Thermal Annealing

Preparation and characterization of ultra-thin cobalt silicide for VLSI applications

Characteristics of titanium silicide formed by Si/Mo/Ti trilayer metallisation

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