During the TiSi 2 formation from Ti/Si couples, Ti is often found to oxidize appreciably by reacting with residual oxygen in annealing ambients. A bilayer of Mo/Ti replacing a single layer ofTi has been evaluated for application to a self-aligned process. Due to the presence of the thin overlayer Mo, a reduced internal oxidation ofTi increased the overall oxidation resistance during the silicide-formation cycle. We also found that the Mo/Ti bilayer was incorporating an appreciable amount of nitrogen along with the formation of TiSi 2 layer in a flowing nitrogen forming-gas (N2 + 8-10% H 2 ) ambient when the structure was subjected to heat treatment at 590 ·C ± 10 ·C. The thin-film rections of Mo/Ti/Si structures will be discussed and compared with that of Ti/Si couples. Due to the uniform TiSi 2 formation with minimized oxidation, a very homogeneous etching across a wafer resulted during an excess-metal etch step. This bilayer was applied to fabricate MOSFET's giving 3-4 n /D of sheet resistance with good reproducibility.
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