Characteristics of titanium silicide formed by Si/Mo/Ti trilayer metallisation

Abstract

The Si/Mo/Ti trilayer structure exhibits good oxidation resistance. The tormed titanium silicide possesses a low resistivity of 16pQ cm after annealing for 30 min at 750 "C and good stability for wet and dry oxidation at temperatures above 900 "C. The barrier height of titanium silicides increases slightly as the annealing temperature is raised above 600 "C, and is about 0.6 eV at 750 "C for both the n-type and p-type substrates. With As' (or BF;) ion implantation to increase the surface concentration of n-type (or p-type) substrate, the effective barrier height can be reduced to about 0.4 eV for an implantation dose of 1. 0~ IO" cm-'. By means of As: (or BF;) ion implantation to introduce a thin inversion layer on p-type (or n-type) silicon substrate, the effective barrier height is increased to about 0.9 (or 0.82) eV for a dose of 1 X 10'' cm-'.

Comparative study of double ion implant Ti salicide and pre-amorphization implant Co salicide for ultra-large-scale integration applications

“…At present, for ultra-large-scale integration (ULSI) and sub-micrometre complementary metal-oxide semiconductor (CMOS) processes, the self-aligned silicide (salicide) technique is usually used to lower the sheet resistances of polysilicon and source/drain regions [1][2][3][4][5][6]. Titanium silicide (TiSi 2 ) and cobalt silicide (CoSi 2 ) are the two most widely used material systems because of their low resistivity and high temperature stability.…”