<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">SiH</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant="italic">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>excitation: An alternate mechanism for porous Si photoluminescence

Prokes, S. M.; Glembocki, O. J.; Bermudez, V. M.; Kaplan, R.; Friedersdorf, L. E.; Searson, Peter C.

doi:10.1103/physrevb.45.13788

Cited by 345 publications

(74 citation statements)

References 19 publications

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“…The tunable visible PL in PS may be attributed to SiHx groups (Wolford et al, 1983). This may be further confirmed from the fact that on heat treatment (Prokes et al , 1992) hydrogen is desorbed from the porous silicon and thus the quenching of the PL with temperature (Cullis et al, 1997) due to presence of non-radiative dangling bonds. Further there is a report that surface molecules, specifically siloxene, a by-product of the anodization process and remaining on the surface of the porous silicon (Hamilton , 1995), may be responsible for 'red' PL band (Fuchs et al, 1992).…”

Section: Photoluminescencementioning

confidence: 50%

Nanocrystalline Porous Silicon

Basu¹,

Kanungo²

2011

Crystalline Silicon - Properties and Uses

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Section: Photoluminescencementioning

confidence: 50%

Nanocrystalline Porous Silicon

Basu¹,

Kanungo²

2011

Crystalline Silicon - Properties and Uses

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“…# 12) is shown. This pore widening experiment resulted in a blueshifted weak emission which is in contradiction with the previous report (4). The weak emission in this case can be attributed to excessive removal of oxides which probably leads to an abundant non-radiative recombination centers around nanocrystalline structures.…”

contrasting

confidence: 55%

The effects of surface treatment on optical and vibrational properties of stain-etched silicon

Kalem

Göbelek

Kurtar

et al. 1995

Nanostructured Materials

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Abstract-The effects of surface treatment on optical and vibrational properties of 1~)r.o~ silicon (por-Si) layers grown on p-type Si wafers by electroless etching technique 11'tr~ studied by FTIR spectroscopy and photoluminescence (PL). The results indicate a c-orrclatlon between the PL intensity and the strength of the absorption bands induced by IN alflh ydrlde complexes (SiH,, n 2 2). However, similar correlation was also established for monohydride species as evidenced from the layers containing no multihydrides.FUTtlrfrmore, a new band is observed at 710 cm-' and assigned to multihydrides suggesting a I~

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“…In the early years after Canham´s report, besides the quantum confinement effect, many other models have been proposed to explain the PL emission. The most important to be mentioned here are: recombination via surface states on nanostructures (Koch et al, 1993), siloxene compounds (Brandt, 1992), amorphous phases (George, 1992) and SiH X complexes (Prokes, 1992). A comprehensive model grouping the quantum confinement effect and the contribution of surface states as recombination centers was proposed by Wolkin and coworkers (Wolkin, 1999).…”

Section: Introductionmentioning

confidence: 99%