Abstract-The effects of surface treatment on optical and vibrational properties of 1~)r.o~ silicon (por-Si) layers grown on p-type Si wafers by electroless etching technique 11'tr~ studied by FTIR spectroscopy and photoluminescence (PL). The results indicate a c-orrclatlon between the PL intensity and the strength of the absorption bands induced by IN alflh ydrlde complexes (SiH,, n 2 2). However, similar correlation was also established for monohydride species as evidenced from the layers containing no multihydrides.FUTtlrfrmore, a new band is observed at 710 cm-' and assigned to multihydrides suggesting a I~
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