Advances in Chemical Sensors 2012
DOI: 10.5772/31286
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Surface-Functionalized Porous Silicon Wafers: Synthesis and Applications

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“…Si-Si bond intensity is known to develop upon progressive hydrogenation of amorphous silicon (Volodin and Koshelev, 2013). The intense Si-Si bonding is stable for progressive SC-PCS anodization times shown up to 2,400 s. Comparatively, NSC-PS samples (Figure S5B) display an initial increase (up to 500 s anodization time) in Si-Si peak intensity, most likely due to surface functional group electron-withdrawing effects experienced only during low oxidation times (Collins et al, 2013;Fahlman Bradley and Ramírez-Porras, 2012). NSC-PS samples show a decrease in Si-Si bond intensity after only 1,200 s of anodization time, illustrating a significant breakdown of silicon crystallinity from the high strain and Si-Si bond breaking resulting from the increased concentration of O x Si-H y surface groups.…”
Section: Nanostructure and Molecular Analysis: Formation Of Denuded Surfacementioning
confidence: 97%
“…Si-Si bond intensity is known to develop upon progressive hydrogenation of amorphous silicon (Volodin and Koshelev, 2013). The intense Si-Si bonding is stable for progressive SC-PCS anodization times shown up to 2,400 s. Comparatively, NSC-PS samples (Figure S5B) display an initial increase (up to 500 s anodization time) in Si-Si peak intensity, most likely due to surface functional group electron-withdrawing effects experienced only during low oxidation times (Collins et al, 2013;Fahlman Bradley and Ramírez-Porras, 2012). NSC-PS samples show a decrease in Si-Si bond intensity after only 1,200 s of anodization time, illustrating a significant breakdown of silicon crystallinity from the high strain and Si-Si bond breaking resulting from the increased concentration of O x Si-H y surface groups.…”
Section: Nanostructure and Molecular Analysis: Formation Of Denuded Surfacementioning
confidence: 97%