Nanocrystalline Porous Silicon

Basu, S.; Kanungo, J.

doi:10.5772/23355

Cited by 20 publications

(24 citation statements)

References 135 publications

(136 reference statements)

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“…Peak #4 is attributed to oxygen-deficient centers (ODCs); it appears at 300 °C with a sharp increase after 450 °C. In accordance with refs and , oxygen mobility occurs in this temperature range. From this point of view, our assignment is in agreement with ref , where the presence of ODC of about 1.8 eV was concluded.…”

Section: Resultssupporting

confidence: 91%

“…The #5th peak appears at high temperatures (450–550 °C). According to refs , and , this energy range is typical for the luminescence of silicon clusters with sizes under 25 nm . The spectral position of deconvoluted peaks varies slightly for the luminescence spectra obtained at different temperatures because of structural changes in silicon–oxygen and organic parts during heating.…”

Section: Resultsmentioning

confidence: 85%

“…Peaks #1 and #2 are in good correlation with variants of the E ′ center. , Peak #3 correlates with nonbridging oxygen hole centers . Peak #4 is attributed to oxygen-deficient centers (ODCs); it appears at 300 °C with a sharp increase after 450 °C.…”

Section: Resultsmentioning

confidence: 90%

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Photocured Organofunctional Silicon-Based Polymer and Its Y₂O₃ Nanocomposite as the Luminescence Tracer of Thermal History

Pankin

Mamonova

Mongilyov

et al. 2022

ACS Appl. Polym. Mater.

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Materials with irreversibly changing properties after thermal heating are of great interest as thermal history trackers and are in demand as part of almost any device. Here, a promising thermoreporting material based on an organosilicone nanocomposite is suggested. Samples of photocured poly(1-trimethoxysilylpropyloxymethyl)ethylenoxide (polyGPTMS) and its nanocomposite with a filler of Y2O3 nanoparticles (polyGPTMS–Y2O3) were obtained with UV laser polymerization. The subsequent heat treatment of the samples revealed luminescence, the spectral position of which demonstrated a red shift with temperature increase. Comparative analysis of luminescence and Fourier-transform infrared spectroscopy spectra as well as theoretical modeling were used to characterize the structural peculiarities of the polymer and the nanocomposite. It was found that the luminescence behavior correlates with the color centers formation in the course of thermal treatment. The red shift of luminescence with temperature is associated with the redistribution of the chemical network and changes in the contribution of different color centers. The main effect is connected with an E′ center and oxygen-deficient centers, where the predominant contribution of the latter at high temperatures determines the observed luminescence red shift. The different dynamics of the color centers formation for polyGPTMS and polyGPTMS–Y2O3 results in a correspondingly stepwise and gradual luminescence red shift. The uncovered gradual luminescence red shift with thermal treatment of the polyGPTMS–Y2O3 makes the nanocomposite a promising tracer of thermal history. Using polyGPTMS–Y2O3 nanocomposite as a reporting material allows establishing not only the fact of heating but also the heating temperature.

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Section: Resultssupporting

confidence: 91%

Section: Resultsmentioning

confidence: 85%

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Photocured Organofunctional Silicon-Based Polymer and Its Y₂O₃ Nanocomposite as the Luminescence Tracer of Thermal History

Pankin

Mamonova

Mongilyov

et al. 2022

ACS Appl. Polym. Mater.

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“…This clearly indicates the abundance of Zn atoms and existence of sulfur vacancy, which may strongly influence the emission characteristics of Si/ZnS heterojunctions. Since the presence of a native oxide can strongly influence the carrier transport across the junction in Si-based heterojunction devices, XPS analysis has also been used to probe the Si/ZnS interface. For this, we performed XPS depth profile analysis by sputter-etching the outer ZnS layer with 2.0 keV Ar + ions until the signal from the Si core is detected.…”

Section: Resultsmentioning

confidence: 99%

Fabrication of Si/ZnS Radial Nanowire Heterojunction Arrays for White Light Emitting Devices on Si Substrates

Katiyar

Sinha

Manna

et al. 2014

ACS Appl. Mater. Interfaces

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Well-separated Si/ZnS radial nanowire heterojunction-based light-emitting devices have been fabricated on large-area substrates by depositing n-ZnS film on p-type nanoporous Si nanowire templates. Vertically oriented porous Si nanowires on p-Si substrates have been grown by metal-assisted chemical etching catalyzed using Au nanoparticles. Isolated Si nanowires with needle-shaped arrays have been made by KOH treatment before ZnS deposition. Electrically driven efficient white light emission from radial heterojunction arrays has been achieved under a low forward bias condition. The observed white light emission is attributed to blue and green emission from the defect-related radiative transition of ZnS and Si/ZnS interface, respectively, while the red arises from the porous surface of the Si nanowire core. The observed white light emission from the Si/ZnS nanowire heterojunction could open up the new possibility to integrate Si-based optical sources on a large scale.

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“…The Ag/Ag 2 O layer with a large number of interfacial traps exhibits the Fermi-level pinning at the Ag/Ag 2 O interface. This can block the electrical response of the Ag/Ag 2 O layer . However, the Ag/Ag 2 O layer with thin Ag films, which has a small number of interfacial traps, reveals an unpinned Fermi level and attains more stable and reliable electrical contact than thick films.…”

Section: Resultsmentioning

confidence: 99%

Ag₂O/β-Ga₂O₃ Heterojunction-Based Self-Powered Solar Blind Photodetector with High Responsivity and Stability

Park

et al. 2022

ACS Appl. Mater. Interfaces

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Self-powered deep-ultraviolet photodetectors have received considerable attention in recent years because of their efficiency, reliability, and various applications in civilian and military fields. Herein, a Ag/Ag 2 O layer is continuously deposited on a β-Ga 2 O 3 epitaxial layer by a facing target sputtering system without opening the chamber, which has an advantage in time and cost. A p−n junction photodetector was constructed through the Ag 2 O/β-Ga 2 O 3 heterojunction and by varying the thickness of the Ag film, which was controlled by the sputtering time. The effect of top electrode thickness on the photoresponse characteristics of photodetectors was studied. Because thin Ag films have low surface roughness, indicating low optical loss and good interfacial conditions, photodetectors using a thin Ag film as the top electrode exhibit high photoresponsivity. However, Ag films that were thinner than the threshold thickness, which is the minimum thickness required to form a continuous, homogeneous surface film, exhibited rather low performance owing to the high reflection and scattering caused by the inhomogeneous surface morphology. The as-fabricated photodetector with a 20 nm Ag film presents a high on/off ratio of 3.43 × 10 8 , responsivity and detectivity of 25.65 mA/W and 6.10 × 10 11 Jones, respectively, and comparable rise and decay times of 108 and 80 ms, respectively. Additionally, even after three months of storage in an ambient environment, the photoresponse of the photodetector was maintained, indicating good stability in air. These results suggest that Ag 2 O/β-Ga 2 O 3 heterojunction-based photodetectors with thin Ag films can be used in various applications requiring deep-ultraviolet detection without an external power supply. KEYWORDS: deep ultraviolet (DUV), photodetector, self-powered, Ag film thickness, Ag 2 O/β-Ga 2 O 3 , p−n junction

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Nanocrystalline Porous Silicon

Cited by 20 publications

References 135 publications

Photocured Organofunctional Silicon-Based Polymer and Its Y₂O₃ Nanocomposite as the Luminescence Tracer of Thermal History

Photocured Organofunctional Silicon-Based Polymer and Its Y₂O₃ Nanocomposite as the Luminescence Tracer of Thermal History

Fabrication of Si/ZnS Radial Nanowire Heterojunction Arrays for White Light Emitting Devices on Si Substrates

Ag₂O/β-Ga₂O₃ Heterojunction-Based Self-Powered Solar Blind Photodetector with High Responsivity and Stability

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Nanocrystalline Porous Silicon

Cited by 20 publications

References 135 publications

Photocured Organofunctional Silicon-Based Polymer and Its Y2O3 Nanocomposite as the Luminescence Tracer of Thermal History

Photocured Organofunctional Silicon-Based Polymer and Its Y2O3 Nanocomposite as the Luminescence Tracer of Thermal History

Fabrication of Si/ZnS Radial Nanowire Heterojunction Arrays for White Light Emitting Devices on Si Substrates

Ag2O/β-Ga2O3 Heterojunction-Based Self-Powered Solar Blind Photodetector with High Responsivity and Stability

Contact Info

Product

Resources

About

Photocured Organofunctional Silicon-Based Polymer and Its Y₂O₃ Nanocomposite as the Luminescence Tracer of Thermal History

Photocured Organofunctional Silicon-Based Polymer and Its Y₂O₃ Nanocomposite as the Luminescence Tracer of Thermal History

Ag₂O/β-Ga₂O₃ Heterojunction-Based Self-Powered Solar Blind Photodetector with High Responsivity and Stability