Misfit stress in p/p+ epitaxial silicon wafers: effect and elimination

Lin, W.H.; Hill, David W.; Paulnack, C. L.

doi:10.1109/vtsa.1991.246712

Cited by 2 publications

(1 citation statement)

References 5 publications

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“…Two approaches have been reported to address the problems associated with the strain between the heavily doped p+ substrate and the lightly doped epitaxial layer. In one approach, co-doping the p+ boule with germanium had compensated the strain introduced by the high boron levels (Lin et al . 1991).…”

Section: Introductionmentioning

confidence: 99%

X-ray topography and diffraction studies of misfit dislocation nucleation in Si-based structures

Goorsky

Feichtinger

Fukuto

et al. 1999

Philosophical Transactions of the Royal Society of London. Seri

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The combination of different X-ray topography techniques and reciprocal space mapping is used to monitor the early stages of relaxation in silicon-based heterostructures. For lightly doped silicon layers grown on heavily boron-doped 150 mm substrates, Lang transmission topography demonstrates that an orthogonal array of 60 • misfits nucleates only at the wafer periphery. The length of the individual misfit segment depends on the epitaxial layer thickness and on the presence of the orthogonal blocking misfit segments. Double-crystal X-ray topography, with better strain and tilt resolution, allows one to distinguish between the different tilt components of parallel misfit dislocations. Relaxation is quantified using triple-axis X-ray diffraction. Reciprocal space maps around both the ( 004) and ( 224) reflections show that the misfits relieve about 38% of the strain. The combination of these X-ray techniques offers insight into the means to reduce dislocation formation and into the fundamental nature of the dislocations themselves.

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Section: Introductionmentioning

confidence: 99%

X-ray topography and diffraction studies of misfit dislocation nucleation in Si-based structures

Goorsky

Feichtinger

Fukuto

et al. 1999

Philosophical Transactions of the Royal Society of London. Seri

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Misfit Dislocation Nucleation Study in p/p[sup +] Silicon

Feichtinger

Goorsky

Oster

et al. 2001

J. Electrochem. Soc.

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Different edge treatments were used during the processing of 150 mm diameter highly boron-doped silicon substrate wafers to create a variation of crystallographic damage around the wafer edges. We studied the wafer edge as misfit dislocation generation sites in epitaxial p/p ϩ silicon wafers. These strain-relaxing defects nucleate heterogeneously at the lattice-mismatched interface. We examined the effect of a variation of wafer edge treatments on misfit dislocation formation in p/p ϩ silicon test wafers. We determined that a lower microroughness of the wafer edge results in a decrease in the misfit dislocation density and length. We were able to show that a careful combination of edge treatments including damage removal steps helps significantly reduce misfit dislocations in strained layer epitaxy.

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Misfit stress in p/p+ epitaxial silicon wafers: effect and elimination

Cited by 2 publications

References 5 publications

X-ray topography and diffraction studies of misfit dislocation nucleation in Si-based structures

X-ray topography and diffraction studies of misfit dislocation nucleation in Si-based structures

Misfit Dislocation Nucleation Study in p/p[sup +] Silicon

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