Misfit Dislocation Nucleation Study in p/p[sup +] Silicon

Feichtinger, Petra; Goorsky, Mark S.; Oster, Dwain; D’Silva, Tom; Moreland, Jim

doi:10.1149/1.1375796

Cited by 9 publications

(8 citation statements)

References 18 publications

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“…Of course, the defects themselves may not be so large, but the distortions they create extend over length scales (tens of microns), far larger than the defects themselves. Similar concepts have been demonstrated in earlier studies on the misfit dislocations in Si using XRT . Note the presence of some orthogonal lines and circular features in Figure c, which are due to metallization on the sample surface.…”

Section: Resultssupporting

confidence: 86%

“…Similar concepts have been demonstrated in earlier studies on the misfit dislocations in Si using XRT. [30,31] Note the presence of some orthogonal lines and circular features in Figure 4c, which are due to metallization on the sample surface. Transmission electron microscope (TEM) was used to further investigate the nature of these extended defects.…”

Section: Resultsmentioning

confidence: 99%

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Strain Recovery and Defect Characterization in Mg‐Implanted Homoepitaxial GaN on High‐Quality GaN Substrates

Wang

Huynh

Liao

et al. 2020

Physica Status Solidi (b)

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The evolution of defects due to high‐pressure annealing of magnesium ion‐implanted epitaxial GaN grown on high‐quality GaN substrates is investigated. Changes in the implant‐induced strain are quantified as a function of annealing temperature and time. After annealing at 1300 °C for 10 min, the implant‐induced strain is fully relieved and accompanied by the presence of extended defects such as basal plane stacking faults and prismatic loops. Approximately one‐third of the original implant‐induced strain remains after annealing at 700 °C, and 5% of the original strain remains at 1000 °C for 100 min. In all cases, nearly all of the recovered strain occurs within first few minutes of annealing. A prominent increase in the asymmetric (10true1¯4) triple axis X‐ray rocking curve full width at 0.01 maximum (FW0.01M) is observed after annealing at 1300 °C for 10 min. After annealing at 1300 °C for 100 min, a subsequent decrease in FW0.01M is correlated with a reduction of the extended defect density from 4 × 108 to 3 × 107 cm−2, determined through transmission electron microscope (TEM) measurements. Further reduction in the density of the extended defects by optimizing annealing temperature and time is expected to improve the performance of GaN‐based vertical power devices.

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Section: Resultssupporting

confidence: 86%

Section: Resultsmentioning

confidence: 99%

Strain Recovery and Defect Characterization in Mg‐Implanted Homoepitaxial GaN on High‐Quality GaN Substrates

Wang

Huynh

Liao

et al. 2020

Physica Status Solidi (b)

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“…Since nucleation from the low energy sites is likely to be from particles or wafer edges, the dislocations are likely to have the same Burgers vector and be aligned along a few h110i directions (Refs. [17][18][19] which could lead to tilt of the epi-layers, surface roughness and lower glide velocities from dislocation pile-ups (Ref. 12).…”

Section: Discussionmentioning

confidence: 99%

Materials properties and dislocation dynamics in InAsP compositionally graded buffers on InP substrates

Jandl¹,

Bulsara²,

Fitzgerald

2014

Journal of Applied Physics

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The properties of InAsxP1−x compositionally graded buffers grown by metal organic chemical vapor deposition are investigated. We report the effects of strain gradient (ε/thickness), growth temperature, and strain initiation sequence (gradual or abrupt strain introduction) on threading dislocation density, surface roughness, epi-layer relaxation, and tilt. We find that gradual introduction of strain causes increased dislocation densities (>106/cm2) and tilt of the epi-layer (>0.1°). A method of abrupt strain initiation is proposed which can result in dislocation densities as low as 1.01 × 105 cm−2 for films graded from the InP lattice constant to InAs0.15P0.85. A model for a two-energy level dislocation nucleation system is proposed based on our results.

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“…They are believed to originate from MDs in the <110>‐direction parallel to the EpiWafer surface, which forms due to lattice mismatch between the p + ‐type Si substrate and the p‐type Si EpiWafer. [ 35 ] Additionally, Figure 3d shows a cross‐section raster electron microscope (REM) image of the direct interface between a p + ‐type Si substrate and epitaxially grown p‐type Si layer, being reference material without PorSi. EPs, appearing as small black dots within the interface, confirm the presence of MDs orientated along the <110> direction in the (100) plane.…”

Section: Resultsmentioning

confidence: 99%

“…Our hypothesis for the presence of pair‐wise‐connected EPs is the following: During epitaxial growth, MDs form along the <110> direction at the interface between the p‐type Si EpiWafer and the p + ‐type substrate, due to the lattice mismatch. [ 35 ] The lattice mismatch is proportional to the difference in doping concentration of the substrate and the EpiWafer and can be calculated based on the lattice expansion coefficient β of –6.5 × 10 −24 cm −3 for boron in silicon, resulting in a mismatch of 4.5 × 10 −5 for the used combination of p‐type EpiWafer and p + ‐type substrate. [ 15 ] At high process temperatures, such as 1120 °C, the existing MDs are mobile and can move within the EpiWafers.…”

Section: Resultsmentioning

confidence: 99%

Toward Highly Efficient Low‐Carbon Footprint Solar Cells: Impact of High‐Temperature Processing on Epitaxially Grown p‐Type Silicon Wafers

Rittmann,

Messmer,

Niewelt

et al. 2024

Solar RRL

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Conventional silicon (Si) wafers are produced by energy‐intensive ingot crystallization which is responsible for a major share of a solar cell’s carbon footprint. Our work explores Si EpiWafers that are produced by direct epitaxial deposition of trichlorosilane on a re‐usable substrate. This approach requires less energy and material and hence offers a potential for reduced cost and carbon footprint. Solar cells made from EpiWafers usually suffer from efficiency losses due to recombination at structural crystal defects associated with epitaxial growth. We investigated the nature of these defects and observed that defects at the EpiWafer’s back surface are critical. Most of these defects are highly recombination‐active, pairwise‐connected misfit dislocations in the <110>‐direction. They originate from a lattice mismatch between the highly‐doped substrate and the less‐doped epitaxially grown layer. In this contribution, we demonstrate that the detrimental impact of these defects can be mitigated using typical manufacturing processes of high‐efficiency solar cells, such as KOH‐etching, gettering and oxidation. We report local minority charge carrier lifetimes as high as 2.2 ms after industrially feasible processes. Simulations using efficiency limiting bulk recombination analysis (ELBA) imply that the material would allow conversion efficiencies of up to 25.6 % considering a TOPCoRE solar cell design.TOC: Epitaxially grown silicon wafers (EpiWafers) are a promising alternative to Cz‐Si wafers for highly efficient solar cells with a low carbon footprint. For p‐type EpiWafers, we report minority charge carrier lifetimes as high as 2.2 ms and an efficiency potential of 25.6 %. Structural defects, as a remaining quality limitation in the EpiWafer, are discussed with respect to the effect of KOH‐etching, gettering, and oxidation.This article is protected by copyright. All rights reserved.

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Misfit Dislocation Nucleation Study in p/p[sup +] Silicon

Cited by 9 publications

References 18 publications

Strain Recovery and Defect Characterization in Mg‐Implanted Homoepitaxial GaN on High‐Quality GaN Substrates

Strain Recovery and Defect Characterization in Mg‐Implanted Homoepitaxial GaN on High‐Quality GaN Substrates

Materials properties and dislocation dynamics in InAsP compositionally graded buffers on InP substrates

Toward Highly Efficient Low‐Carbon Footprint Solar Cells: Impact of High‐Temperature Processing on Epitaxially Grown p‐Type Silicon Wafers

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