Proceedings of the 38th Conference on Design Automation - DAC '01 2001
DOI: 10.1145/378239.378506
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Min/max on-chip inductance models and delay metrics

Abstract: This paper proposes an analytical inductance extraction model for characterizing min/max values of typical on-chip global interconnect structures, and a corresponding delay metric that can be used to provide RLC delay prediction from physical geometries. The model extraction and analysis is efficient enough to be used within optimization and physical design exploration loops. The analytical min/max inductance approximations also provide insight into the effects caused by inductances.

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Cited by 20 publications
(9 citation statements)
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References 34 publications
(30 reference statements)
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“…5 and Eqn. 6 we can intuitively infer that µ2 and µ3 are always positive when La, Ka = 0, which represents lossy lines with "overdamped" response [14]. Also, µ2 and µ3 decreases monotonically as the self and mutual inductance values increases.…”
Section: Transfer Function Generationmentioning
confidence: 85%
“…5 and Eqn. 6 we can intuitively infer that µ2 and µ3 are always positive when La, Ka = 0, which represents lossy lines with "overdamped" response [14]. Also, µ2 and µ3 decreases monotonically as the self and mutual inductance values increases.…”
Section: Transfer Function Generationmentioning
confidence: 85%
“…Depending on the switching patterns, the difference in loop inductance can be very large; up to 70X in this case. In fact, during in-phase switching the strong positive L m among lines results in an L loop that can be more than 50% larger than L self , which is usually considered as the upper-bound of on-chip inductance [12]. Fig.…”
Section: A Multiple-bit Data-busmentioning
confidence: 99%
“…Even when the mesh structure is adopted, wire inductance still varies according to the relative position inside the mesh grid spacing. The use of analytical formulae for rapid estimation and evaluation of the inductance [6,7], or quantitative evaluation of the inductance impact using statistical methodology have been proposed [8]. However, unknown factors still exist for modeling inductance, such as the contribution of silicon substrate to the current return path.…”
Section: Introductionmentioning
confidence: 99%