MIM capacitors using amorphous high-k PrTixOy dielectrics

Wenger, Christian; Sorge, R.; Schroeder, Thomas; Mane, Anil U.; Lippert, G.; Łupina, Grzegorz; Dbrowski, J.; Zaumseil, P.; Muessig, H.J.

doi:10.1016/j.mee.2005.04.018

Cited by 19 publications

(7 citation statements)

References 13 publications

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“…21,22 and can be improved by low temperature post deposition annealing (compatible with BEOL process) in oxygen/ nitrogen plasma, ultraviolet (UV) or ozone environments. 19,23 It is worth mentioning that experimentally estimated a and capacitance densities fit with the theoretical plot reported by Blonkowski et al, 15 and the quadratic electric field coefficient a E for LGO was found to fall in the range of (1 À 4) Â 10 À19 m 2 /V 2 . The variation in quadratic VCC with ac drive frequency for different CETs is plotted in Fig.…”

supporting

confidence: 69%

Advanced high-k dielectric amorphous LaGdO3 based high density metal-insulator-metal capacitors with sub-nanometer capacitance equivalent thickness

Pavunny

Misra

Scott

et al. 2013

Applied Physics Letters

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Articles you may be interested inMetal-insulator-metal capacitors based on lanthanum oxide high-κ dielectric nanolayers fabricated using dense plasma focus device J. Vac. Sci. Technol. B 32, 03D107 (2014); 10.1116/1.4862093 Advanced high-k gate dielectric amorphous LaGdO3 gated metal-oxide-semiconductor devices with subnanometer equivalent oxide thickness Appl. Phys. Lett. 102, 192904 (2013); 10.1063/1.4805037 Reliability of Al 2 O 3 -doped ZrO 2 high-k dielectrics in three-dimensional stacked metal-insulator-metal capacitors Time dependent dielectric breakdown of amorphous ZrAl x O y high-k dielectric used in dynamic random access memory metal-insulator-metal capacitor J. Appl. Phys. 106, 044104 (2009); 10.1063/1.3204001Modeling of nonlinearities in the capacitance-voltage characteristics of high-k metal-insulator-metal capacitors

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supporting

confidence: 69%

Advanced high-k dielectric amorphous LaGdO3 based high density metal-insulator-metal capacitors with sub-nanometer capacitance equivalent thickness

Pavunny

Misra

Scott

et al. 2013

Applied Physics Letters

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“…The O III peak normally corresponds to oxygen vacancy and adsorption of OH – , CO 3 2– , O – , O 2 2– , and so forth . Praseodymium oxide exhibits a high O III peak , owing to the adsorption of hydroxyl contents owing to their highly basic − and hygroscopic properties. , Therefore, the O III peak of the Pr-doped In 2 O 3 spheres can be attributed to the hydroxyl group component. The area percentage of O III monotonously increases with the increasing concentration of praseodymium (Table ), implying that the adsorption of surface hydroxyl groups was promoted by the basic and hygroscopic nature of praseodymium.…”

Section: Resultsmentioning

confidence: 99%

“…These interconnected or hollow macroporous structures with high gas accessibility can be an excellent 29 The O III peak normally corresponds to oxygen vacancy and adsorption of OH − , CO 3 2− , O − , O 2 2− , and so forth. 30 Praseodymium oxide exhibits a high O III peak 31,32 owing to the adsorption of hydroxyl contents owing to their highly basic 33−35 and hygroscopic properties. 36,37 Therefore, the O III peak of the Pr-doped In 2 O 3 spheres can be attributed to the hydroxyl group component.…”

Section: Methodsmentioning

confidence: 99%

Humidity-Independent Gas Sensors Using Pr-Doped In₂O₃ Macroporous Spheres: Role of Cyclic Pr³⁺/Pr⁴⁺ Redox Reactions in Suppression of Water-Poisoning Effect

Kim

Kwak

et al. 2019

ACS Appl. Mater. Interfaces

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Pure and 3–12 at. % Pr-doped In2O3 macroporous spheres were fabricated by ultrasonic spray pyrolysis and their acetone-sensing characteristics under dry and humid conditions were investigated to design humidity-independent gas sensors. The 12 at. % Pr-doped In2O3 sensor exhibited approximately the same acetone responses and sensor resistances at 450 °C regardless of the humidity variation, whereas the pure In2O3 exhibited significant deterioration in gas-sensing characteristics upon the change in the atmosphere, from dry to humid (relative humidity: 80%). Moreover, the 12 at. % Pr-doped In2O3 sensor exhibited a high response to acetone with negligible cross responses to interfering gases (NH3, CO, benzene, toluene, NO2, and H2) under the highly humid atmosphere. The mechanism for the humidity-immune gas-sensing characteristics was investigated by X-ray photoelectron and diffuse reflectance infrared Fourier transform spectroscopies together with the phenomenological gas-sensing results and discussed in relation with Pr3+/Pr4+ redox pairs, regenerative oxygen adsorption, and scavenging of hydroxyl groups.

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“…The thickness dependency of VCC is considered an inherent property and is found to obey the relation α ∝ (1/ t r ), where t , the high-k film thickness, is proportional to CET. In this study, the estimated value of the exponent “ r ” was small and nearly equal to one [47,48] and shows that LaGdO 3 -based MIM capacitor structures can be down scaled more efficiently (in terms of CET) with lesser voltage linearity reduction in comparison with other high-k materials of larger “ r ” [49]. Normalized capacitances modeled with the voltage linearity law given by Equation (12) are represented by dashed lines in Figure 19a.…”

Section: Amorphous Lagdo3-based High-density Metal-insulator-metal Camentioning

confidence: 99%

Lanthanum Gadolinium Oxide: A New Electronic Device Material for CMOS Logic and Memory Devices

2014

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A comprehensive study on the ternary dielectric, LaGdO3, synthesized and qualified in our laboratory as a novel high-k dielectric material for logic and memory device applications in terms of its excellent features that include a high linear dielectric constant (k) of ~22 and a large energy bandgap of ~5.6 eV, resulting in sufficient electron and hole band offsets of ~2.57 eV and ~1.91 eV, respectively, on silicon, good thermal stability with Si and lower gate leakage current densities within the International Technology Roadmap for Semiconductors (ITRS) specified limits at the sub-nanometer electrical functional thickness level, which are desirable for advanced complementary metal-oxide-semiconductor (CMOS), bipolar (Bi) and BiCMOS chips applications, is presented in this review article.

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MIM capacitors using amorphous high-k PrTixOy dielectrics

Cited by 19 publications

References 13 publications

Advanced high-k dielectric amorphous LaGdO3 based high density metal-insulator-metal capacitors with sub-nanometer capacitance equivalent thickness

Advanced high-k dielectric amorphous LaGdO3 based high density metal-insulator-metal capacitors with sub-nanometer capacitance equivalent thickness

Humidity-Independent Gas Sensors Using Pr-Doped In₂O₃ Macroporous Spheres: Role of Cyclic Pr³⁺/Pr⁴⁺ Redox Reactions in Suppression of Water-Poisoning Effect

Lanthanum Gadolinium Oxide: A New Electronic Device Material for CMOS Logic and Memory Devices

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MIM capacitors using amorphous high-k PrTixOy dielectrics

Cited by 19 publications

References 13 publications

Advanced high-k dielectric amorphous LaGdO3 based high density metal-insulator-metal capacitors with sub-nanometer capacitance equivalent thickness

Advanced high-k dielectric amorphous LaGdO3 based high density metal-insulator-metal capacitors with sub-nanometer capacitance equivalent thickness

Humidity-Independent Gas Sensors Using Pr-Doped In2O3 Macroporous Spheres: Role of Cyclic Pr3+/Pr4+ Redox Reactions in Suppression of Water-Poisoning Effect

Lanthanum Gadolinium Oxide: A New Electronic Device Material for CMOS Logic and Memory Devices

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Humidity-Independent Gas Sensors Using Pr-Doped In₂O₃ Macroporous Spheres: Role of Cyclic Pr³⁺/Pr⁴⁺ Redox Reactions in Suppression of Water-Poisoning Effect