Abstract-TID and displacement damage effects are studied for vertical and lateral power MOSFETs in five different technologies in view of the development of radiation-tolerant fully integrated DC-DC converters. Investigation is pushed to the very high level of radiation expected for an upgrade to the LHC experiments. TID induces threshold voltage shifts and, in n-channel transistors, source-drain leakage currents. Wide variability in the magnitude of these effects is observed. Displacement damage increases the on-resistance of both vertical and lateral high-voltage transistors. In the latter case, degradation at high particle fluence might lead to a distortion of the output characteristics curve. HBD techniques to limit or eliminate the radiation-induced leakage currents are successfully applied to these high-voltage transistors, but have to be used carefully to avoid consequences on the breakdown voltage.
We present results on the effect of carbon coevaporation by molecular beam epitaxy on electrical properties of highly boron doped SiGe:C layers for C concentration of around 1020 cm−3. Such C concentrations are needed for substantial suppression of boron outdiffusion. The concentration of electrically active boron and the hole mobility are not affected by the addition of carbon. Carbon-related defects, typically observed for C concentrations below the bulk solid solubility limit (<1018 cm−3), do not significantly reduce the concentration of electrically active B in SiGe:C. However, carbon coevaporation affects carrier lifetimes. The generation lifetime is reduced by more than one order of magnitude in SiGe:C compared with analogous SiGe layers.
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