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Abstract-TID and displacement damage effects are studied for vertical and lateral power MOSFETs in five different technologies in view of the development of radiation-tolerant fully integrated DC-DC converters. Investigation is pushed to the very high level of radiation expected for an upgrade to the LHC experiments. TID induces threshold voltage shifts and, in n-channel transistors, source-drain leakage currents. Wide variability in the magnitude of these effects is observed. Displacement damage increases the on-resistance of both vertical and lateral high-voltage transistors. In the latter case, degradation at high particle fluence might lead to a distortion of the output characteristics curve. HBD techniques to limit or eliminate the radiation-induced leakage currents are successfully applied to these high-voltage transistors, but have to be used carefully to avoid consequences on the breakdown voltage.

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We present results on the effect of carbon coevaporation by molecular beam epitaxy on electrical properties of highly boron doped SiGe:C layers for C concentration of around 1020 cm−3. Such C concentrations are needed for substantial suppression of boron outdiffusion. The concentration of electrically active boron and the hole mobility are not affected by the addition of carbon. Carbon-related defects, typically observed for C concentrations below the bulk solid solubility limit (<1018 cm−3), do not significantly reduce the concentration of electrically active B in SiGe:C. However, carbon coevaporation affects carrier lifetimes. The generation lifetime is reduced by more than one order of magnitude in SiGe:C compared with analogous SiGe layers.

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