Millimeter-wave packaging on alumina board for E-band CMOS power amplifiers

Zhang, Yang; Zhao, Dixian; Reynaert, Patrick

doi:10.1109/pawr.2015.7139195

Cited by 8 publications

(6 citation statements)

References 6 publications

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“…Such a design, however, utilizes an air-filled waveguide, which imposes size constraints for the width of each channel and degrades antenna performance if implemented in an antenna array. In the design in [17], the phase shifters are not in-line with the waveguide. Such a configuration imposes its own restrictions to the antenna spacing of an array as shown in [5] (0.8 λ 0 at 75 GHz).…”

Section: Comparisonmentioning

confidence: 99%

In-Line Vector Modulator Integration in Dielectric-Filled Waveguide

Haarla

Ala‐Laurinaho

Lahti

et al. 2023

IEEE Trans. Compon., Packag. Manufact. Technol.

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This paper proposes a scalable substrate-integrated waveguide (SIW) module accommodating an in-line vector modulator monolithic millimeter integrated circuit (MMIC). The SIW module is realized with low-temperature co-fired ceramic (LTCC) technology, and it can be inserted in a dielectric-filled waveguide (DFWG). The module combines λg/4-transformerbased E-plane tapering and SIWs on LTCC with the wirebonded vector modulator. The proposed active LTCC module and two passive test structures (i.e., a constant-height-SIW module and a SIW module with E-plane taperings) are manufactured and tested as in-line modules in a DFWG. The passive test structures with the waveguide-to-DFWG and DFWG-to-SIW transitions measure 3.1 dB and 4.6 dB of insertion loss on average, respectively, at the 71-81 GHz frequency range. The active LTCC module measurements demonstrate a dielectricfilled waveguide with phase and amplitude tuning capability and gain up to 17.6 dB within the same frequency range. A fourchannel mock-up module with λ0/2 channel spacing is designed and manufactured to demonstrate the scalability of the design.

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Section: Comparisonmentioning

confidence: 99%

In-Line Vector Modulator Integration in Dielectric-Filled Waveguide

Haarla

Ala‐Laurinaho

Lahti

et al. 2023

IEEE Trans. Compon., Packag. Manufact. Technol.

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“…A bondwire packaging design using the same CMOS power amplifier chip was presented in [21]. The chip was placed into a cavity on the board to reduce the wire length.…”

Section: Comparison With Bondwire Packagingmentioning

confidence: 99%

“…In this paper, a flip-chip packaging design from bond-pad to standard rectangular waveguide (WR-12) port is proposed for E-band long-haul communication systems. This work is an expansion of [21]. The cross-section view of the architecture is shown in Fig.…”

Section: Introductionmentioning

confidence: 99%

“…Comparison of measured peak output power among bare die, bondwire packaging and flip-chip packaging[6],[21]. Comparison of gain performance among bare die, bondwire packaging and flip-chip packaging[6],[21].…”

mentioning

confidence: 99%

“…Photograph of packaged chip: (a) chip with bumps before packaging (left), X-ray photo of packaged PA (right), (c) bondwire interconnect in[21].…”

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confidence: 99%

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A Flip-Chip Packaging Design With Waveguide Output on Single-Layer Alumina Board for E-Band Applications

Zhang

Zhao

Reynaert

2016

IEEE Trans. Microwave Theory Techn.

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This paper presents a millimeter-wave packaging design for E-band long-haul point-to-point communications. A broadband flip-chip interconnect with standard 75 µm pad pitch is developed on alumina substrate. To meet the application requirement, a microstrip line to WR-12 waveguide transition is proposed. The transition has no back-short cavity or modified waveguide involved. A back-to-back transition measurement is conducted to characterize the performance. Results show that the working bandwidth is from 69.5 to 87 GHz and the insertion loss at 77 GHz is less than 0.5 dB. A 40-nm CMOS power amplifier is packaged and measured with the proposed packaging design. The entire packaging loss is only 2.5 dB from pads to waveguide, including the loss of a 10 mm microstrip line. The simulated and measured results are in good agreement. The gain and peak output power are 13.4 dB and 17.6 dBm. The silicon temperature is measured as 44.4 • C after saturated output for 30 minutes. The performance is close to probe measurement after deembedding the packaging loss. Comparison between bondwire and flip-chip packaging is discussed and both are verified in millimeter-wave packaging design.

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