Millimeter-Wave On-Wafer TRL Calibration Employing 3-D EM Simulation-Based Characteristic Impedance Extraction

This paper presents a state-of-art review of on-wafer S-parameter characterization of THz silicon transistors for compact modelling purpose. After, a brief review of calibration/de-embedding techniques, the paper focuses on the onwafer calibration techniques and especially on the design and dimensions of lines built on advanced silicon technologies. Other information such as the pad geometry, the ground plane and the floorplan of the devices under test are also compared. The influence of RF probe geometry on the coupling with the substrate and adjacent structures is also considered to evaluate the accuracy of the measurement, especially using EM simulation methodology. Finally, the importance of measuring above 110 GHz is demonstrated for SiGe HBT parameter extraction. The validation of the compact model is confirmed thanks to an EM-spice cosimulation that integrates the whole calibration cum deembedding procedure.

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“…This reinforces our motivation in the use of the boundless ground plane. a) from [14] b) from [15] c) This work…”

Section: Oxide Ring / Slot In Gnd Planmentioning

confidence: 94%

THz Characterization and Modeling of SiGe HBTs: Review (Invited)

Fregonèse

Deng

Cabbia

et al. 2020

IEEE J. Electron Devices Soc.

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“…Indeed, the presence of dummy fills is acknowledged to increase R by several percent with frequency [15]. An alternative method potentially applicable in a more general case could be the estimation of R with very precise 3-D electromagnetic (EM) simulations, similarly to what was done in [16]. In that case, a careful layout is needed to simplify the simulation complexity.…”

Section: Sensitivity Of the R-based Methods To Input Parametersmentioning

confidence: 99%

“…Using the derivation provided in Appendix A, the sensitivity of R and G is developed from (16) and (17) as…”

Section: Sensitivity Analysis Of the Extracted Characteristic Impedancementioning

confidence: 99%

“…Appendix A: Sensitivity analysis From the expressions (16) and (17), we would like to evaluate the sensitivity of R and G to a misestimation of the characteristic impedance. Considering a small perturbation, the variation in G is computed as characterization and optimization toward successful monolithic integration of RF devices using silicon-based technology.…”

Section: Appendixmentioning

confidence: 99%

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Effective resistivity extraction of low-loss silicon substrates at millimeter-wave frequencies

Nyssens

Rack

Raskin

2020

Int. J. Microw. Wireless Technol.

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The effective resistivity (ρ eff ) is a figure of merit commonly used to assess the radio-frequency performance of a substrate from the measurements of coplanar waveguide lines. For highly resistive substrates, such as the trap-rich (TR) substrate, the extracted ρ eff decreases by several orders of magnitude at millimeter-wave frequencies. The explanation for this decay is twofold. First, the imaginary part of the characteristic impedance ${\rm \lpar \Im }\lpar Z_c\rpar \rpar$ is not well extracted, which leads to an incorrect separation of the total losses among the metal and substrate losses. Second, the original expression of ρ eff does not include dielectric losses, which might become non-negligible at millimeter-wave frequencies. This paper solves both issues by presenting a new procedure to extract ρ eff and the dielectric losses simultaneously, and by introducing a novel method to correct ${\rm \Im }\lpar {Z_c} \rpar$ . Furthermore, it is shown that this extraction method enables the correct extraction of substrate parameters up to 220 GHz of TR and high-resistivity silicon substrates. Finally, the origin of the large extracted value of dielectric loss is discussed in the potential presence of surface roughness and surface wave radiation. Both phenomena are discounted thanks to measurements of an additional reflective structure and a standard impedance substrate.

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“…In 2008, an on-wafer technique and calibration method are developed for broadband electrical characterization of GaN nanowires up to 40 GHz [3]. Recently, [4]- [5] reported progress towards establishing traceability for a planar environment and reported detailed uncertainty budgets.…”

Section: Introductionmentioning

confidence: 99%

On-Wafer Broadband Microwave Measurement of High Impedance Devices-CPW Test Structures with Integrated Metallic Nano-Resistances

Daffe

Mubarak

Mascolo

et al. 2018

2018 48th European Microwave Conference (EuMC)

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On-wafer microwave characterization and uncertainty evaluation of two-port coplanar waveguide (CPW) high impedance nanodevices devices are proposed. The test vehicles are built up with resistive metallic nano-films integrated in tapered CPW structures. Microwave conductance in the range 100-500µS associated to parallel capacitances in the order of hundreds aF are exemplary shown up to 20GHz. In addition, the uncertainty related to the post-calibration residual errors terms together with a sensitivity study to the technological process variability using FEM-based EM modelling are considered.

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Millimeter-Wave On-Wafer TRL Calibration Employing 3-D EM Simulation-Based Characteristic Impedance Extraction

Cited by 22 publications

References 30 publications

THz Characterization and Modeling of SiGe HBTs: Review (Invited)

THz Characterization and Modeling of SiGe HBTs: Review (Invited)

Effective resistivity extraction of low-loss silicon substrates at millimeter-wave frequencies

On-Wafer Broadband Microwave Measurement of High Impedance Devices-CPW Test Structures with Integrated Metallic Nano-Resistances

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