Microstructure optimization and optical and interfacial properties modulation of sputtering-derived HfO2 thin films by TiO2 incorporation

Microstructure, optical and electrical properties of solution-derived peroxo-zirconium oxide gate dielectrics for CMOS application

“…The strong peak located at 28.01 corresponds to the monoclinic 111 (¯), and a small peak located at 31.4 1 corresponding to the monoclinic (111). The mean grain size of ZrO 2 films can be calculated from the peak width using Debye-Scherrer's formula as follows [24]:…”

Comparison of microstructure and electrical characteristics of sputtering-derived HfGdO/HfTiO and HfTiO/HfGdO gate stacks

“…4 shows a typical series of XRD patterns of the as-grown and annealed HfGdO/HfTiO films at various temperatures and it can be seen that the crystalline peak of HfO 2 starts to show up clearly after 300 1C Table 1 The flat band voltage (V FB ), density of oxide charge (Q ox ), dielectric constant (k), and the hysteresis of as deposited HfGdO/HfTiO and HfTiO/HfGdO films and annealed ones at 300 1C, 400 1C, and 500 1C. annealing located at around 281, which originates from the monoclinic structure of HfO 2 [21]. It is believed that the high leakage current of crystalline samples is mainly due to grain boundaries that serve as high leakage paths of the gate oxide layer [22].…”

Band offsets in HfTiO/InGaZnO4 heterojunction determined by X-ray photoelectron spectroscopy

“…The IGZO was also deposited by sputtering on both Si and glass substrates by using a single target of InGaZnO 4 with diameter of 60 mm. The RF power was 40 W, while the working pressure was kept constant at 0.5 Pa. All the detailed experimental procedure can be found in our previous publications [18,19]. All as-deposited films were amorphous as determined by X-ray diffraction (XRD) and showed optical transmittance of $80% in the visible region, as shown in Fig.…”

“…However, large frequency dispersion, hysteresis and high leakage current have been also observed [17]. Inspired by the incorporation of TiO 2 into the dielectric films to improve the dielectric constant, HfTiO were widely applied to prepare gate dielectrics with a high dielectric constant of $25 and a large bandgap of $4.66 eV in Si-based MOS devices [18]. However, TFTs based on HfTiO and a-IGZO as gate dielectric and channel layer have been seldom reported up to now.…”