Microscopic mechanism for unipolar resistive switching behaviour of nickel oxides

Abstract

A microscopic mechanism for the unipolar resistive switching phenomenon in nickel oxides is proposed based on the thermal decomposition of oxygen ions from oxygen-rich clusters and their recombination with electron-depleted vacancies induced by local electric field in conductive filaments. The proposed physical feature is confirmed by x-ray photoelectron spectroscopy, transmission electron microscopy and electrical measurements in the as-deposited NiO x samples. The deduced formulae under reasonable approximations directly demonstrate the relationships of switching parameters that were widely observed and questioned in different material systems, indicating the universal validity of the proposed mechanism.

Electrochemical properties of cobalt hydroxychloride microspheres as a new anode material for Li-ion batteries

“…Figure 5d shows the relationship between the real part of the impedance spectra ( Z re ) and ω −1/2 (where ω is the angular frequency in the low frequency region, ω = 2 πf ) in the low-frequency region after 100 cycles. The lower slope ( σ , Warburg impedance coefficient) of the real part of the impedance spectra ( Z re ) versus ω −1/2 for the Co 2 (OH) 3 Cl powder electrode reveals a higher lithium-ion diffusion rate than CoO and CoCl 2 (H 2 O) 2 powder electrodes525354. Figure 6 shows the morphologies of the Co 2 (OH) 3 Cl powders obtained after 100 th charging process.…”

Physical mechanism of resistive switching and optimization design of cell in oxide-based RRAM

“…In the physical mechanism, 1) the conduction is due to electron hopping transport through The calculations on the electron-depletion in V o [10] and Joule heating controlled thermal releasing of O 2-from the easy-reduction clusters [11] as described in the unified mechanism supported the predictions of the unified physical mechanism. The measured data of HfOx-based RRAM devices showed that both hopping (semiconductinglike) and metallic-like conduction behaviors can be observed in the devices under different SET current compliances as shown in Fig.2(a)&(b) [7].…”

One-pot synthesis of graphene/glucose/nickel oxide composite for the supercapacitor application

“…6a and 6b are XPS Ni 2p spectra of RGO/Ni and RGO/glu/Ni, demonstrating the existence of Nickel oxide components again. The Ni 2p 3/2 peaks appeared at 856 and 854 eV, respectively, indicating two kinds (Ni 2 O 3 and NiO) of nickel oxide formed [22]. Although no evidence of Ni 2 O 3 was found in XRD, it could also be created with NiO through the annealing simultaneously.…”