A microscopic mechanism for the unipolar resistive switching phenomenon in nickel oxides is proposed based on the thermal decomposition of oxygen ions from oxygen-rich clusters and their recombination with electron-depleted vacancies induced by local electric field in conductive filaments. The proposed physical feature is confirmed by x-ray photoelectron spectroscopy, transmission electron microscopy and electrical measurements in the as-deposited NiO x samples. The deduced formulae under reasonable approximations directly demonstrate the relationships of switching parameters that were widely observed and questioned in different material systems, indicating the universal validity of the proposed mechanism.
Reactive molecular-beam epitaxy of GaN layers directly on 6H-SiC(0001) Appl. Phys. Lett. 75, 944 (1999); 10.1063/1.124562Low temperature sapphire nitridation: A clue to optimize GaN layers grown by molecular beam epitaxy GaN nanocolumns of exceptional crystalline quality have been grown by molecular beam epitaxy on both silicon ͑111͒ and sapphire ͑0001͒ substrates. Reflection high energy electron diffraction produces a unique diffraction pattern for in situ verification of columnar growth. Subsequent molecular beam epitaxial overgrowth of the nanocolumns has been used to improve the quality of thin film GaN layers when compared to GaN films grown directly on sapphire substrates. Transmission electron microscopy was used to confirm the absence of threading dislocations in the selected columns. Scanning electron microscopy of overgrown material demonstrated surface morphology similar to thin films grown in the intermediate ͑Ga-rich͒ growth regime, or a pattern of densely packed hexagonal structures, depending on growth conditions. Low temperature photoluminescence ͑PL͒ spectra demonstrated a greater than two orders of magnitude improvement in PL intensity of overgrown film versus direct film growth.
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