Physical mechanism of resistive switching and optimization design of cell in oxide-based RRAM

Abstract

This paper presents a unified physical mechanism of TMO-RRAM to elucidate unipolar and bipolar resistive switching behaviors and the cell design methodology including based on the unified physical mechanism. The developed cell design methodology material-oriented cell engineering and innovative operation-scheme is implemented to the optimization of TMO-RRAM cells, identifying the validity of the methodology.