Microphotoluminescence mapping of packaging-induced stress distribution in high-power AlGaAs laser diodes

Martín, Esther; Landesman, Jean-Pierre; Hirtz, J.P.; Fily, A.

doi:10.1063/1.125064

Cited by 36 publications

(14 citation statements)

References 6 publications

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“…Inhomogeneouspackaging induced strain has often been related to faster bar degradation. 15 Figure 1͑c͒ shows that the shift in the PL transition energy of the substrate is very small ͑Ͻ0.3 nm or 0.5 meV͒ across the red-emitting bars. This indicates that the packaging-induced strain of the unaged 650 nm laser bars is low and homogeneous.…”

mentioning

confidence: 96%

The impact of temperature and strain-induced band gap variations on current competition and emitter power in laser bars

Amuzuvi

Bull

Tomm

et al. 2011

Applied Physics Letters

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We report on current competition and emitter power distributions of unaged 650 nm red-emitting and 980 nm infrared tapered high-power laser bars. We observe a correlation between temperature and packaging-induced strain with respect to the emitter output power. A frown-shaped profile of the output power distribution is seen when the temperatures of the emitters near the center of the bar increase compared to those at the edges of the bar. The effect of temperature is found to dominate that of strain and therefore determine the output power distribution across the bar.

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mentioning

confidence: 96%

The impact of temperature and strain-induced band gap variations on current competition and emitter power in laser bars

Amuzuvi

Bull

Tomm

et al. 2011

Applied Physics Letters

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“…The holder is designed to hold six standard 25-mm-diameter bandpass filters. Initial tests with this holder indicated that images taken with different order-sorting filters were sometimes shifted in position by up to 20 (for a field of view of ). This was caused, in part, by the misalignment of the individual filters with respect to the optical axis.…”

Section: Methodsmentioning

confidence: 99%

“…One significant factor affecting device reliability is the packaging-induced mechanical stress caused during the soldering of a laser bar to a heatsink [17]- [19]. This process can introduce an inhomogeneous strain profile across a device [20], which plays a role in defect formation. There are indications that degradation rates have a nonlinear dependence upon packaging induced strain.…”

mentioning

confidence: 99%

“…Microphotoluminescence ( -PL) has been used extensively to measure and study packaging-induced strain [20], [23] and PL microscopy (PLM) has often been used for observing and identifying extended defects [24]- [26]. Photocurrent (PC) spectroscopy [21], [23], [27], micro-Raman [21], [23], and electroluminescence (EL) studies combined with a fast Fourier transform (FFT) analysis [28]- [30] have also been used to study the influences of strain and defects.…”

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confidence: 99%

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A Spectroscopically Resolved Photo- and Electroluminescence Microscopy Technique for the Study of High-Power and High-Brightness Laser Diodes

Bull

Andrianov

Harrison

et al. 2005

IEEE Trans. Instrum. Meas.

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Abstract-A novel and advanced characterization technique is described for performing optical studies of the luminescence properties of materials. It was developed for the investigation of semiconductor materials, including semiconductor laser diodes and photonic integrated circuits. A quantitatively calibrated, spatially and spectrally resolved imaging technique is described, which is based upon the technologies of photoluminescence microscopy and photoluminescence spectroscopy. The principles of the spectroscopically resolved photo-and electroluminescence microscopy techniques are outlined in this paper, and the developed instrument is described in detail. Design calculations used to select and set up the experimental apparatus are presented, and results are found to compare well with this analysis. Various experimental measurements are used to demonstrate the performance of the new instrument. The study of strain and defects in high-power laser diodes is presented as one of the more challenging applications of the new technique. The results presented demonstrate the ability of this technique to image photoluminescence shifts occurring in the substrate of packaged laser bars, enabling the investigation of strain, defects and their evolution with aging. Other applications of the technique include the spectroscopic measurement of near-and far-field patterns and virtual sources of laser diodes, investigations of spectral hole burning and optical scattering processes in lasers and photonic integrated circuits, and studies of organic LEDs. In the future, applications are also envisaged in medicine and the biological sciences.Index Terms-Electroluminescence microscopy, high-brightness laser diodes, high-power laser diodes, photoluminescence microscopy, quantitative imaging, spectroscopic imaging.

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“…Thus, the expected strain distributions for standard packaging techniques such as soft soldering (typically with In solder on Cu heat sinks) or hard soldering (typically with AuSn solder on expansionmatched 1 heat sinks) are well known; see Refs. [4][5][6].…”

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confidence: 98%

Spectroscopic analysis of packaging concepts for high-power diode laser bars

Hempel¹,

Ziegler

Schwirzke-Schaaf³

et al. 2012

Appl. Phys. A

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Double-side cooled high-power diode laser bars packaged by different techniques on different types of passive heat sinks are analyzed in terms of packaging-induced strain. Reference data from standard devices being singleside cooled only and packaged by conventional soft and hard soldering are also presented. Thermal profiling across the devices complements the results. The most suitable packaging architecture and technique for double-side cooled bars is identified. Measurements of the laser emission near field and electroluminescence pattern provide direct reference to the functionality of the devices. Furthermore, a type of cross calibration of the methods used for strain analysis is made, since all techniques are applied to the same set of bars. This involves micro photoluminescence, micro Raman, and degree-of-polarization electroluminescence spectroscopy.

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Microphotoluminescence mapping of packaging-induced stress distribution in high-power AlGaAs laser diodes

Cited by 36 publications

References 6 publications

The impact of temperature and strain-induced band gap variations on current competition and emitter power in laser bars

The impact of temperature and strain-induced band gap variations on current competition and emitter power in laser bars

A Spectroscopically Resolved Photo- and Electroluminescence Microscopy Technique for the Study of High-Power and High-Brightness Laser Diodes

Spectroscopic analysis of packaging concepts for high-power diode laser bars

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