Spectroscopic analysis of packaging concepts for high-power diode laser bars

Hempel, Martin; Ziegler, Mathias; Schwirzke-Schaaf, Sandy; Tomm, Jens W.; Jankowski, Denny; Schröder, Daniel

doi:10.1007/s00339-012-6799-4

Cited by 11 publications

(4 citation statements)

References 14 publications

(23 reference statements)

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“…Winterfeldt et al [35] used degree of polarization measurements to aid in the investigation of the factors limiting the lateral beam parameter of 9xx nm high-power broad-area lasers. Hempel et al [36] made measurements on high-power lasers and provided a comparison of strain measurements by photoluminescence, Raman, and DOP of electroluminescence. Matsui et al [37] used results from DOP measurements and finite elements simulations of strain in their investigations of tuneable VCSELs.…”

Section: Introductionmentioning

confidence: 99%

Degree of polarization of luminescence from GaAs and InP as a function of strain: a theoretical investigation

Cassidy

Landesman

2020

Appl. Opt.

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Experimentally it is known that the degree of polarization (DOP) of luminescence is a sensitive function of strain in III-V materials. It has been assumed that DOP = −K e (e 1 − e 2) and that the rotated degree of polarization (ROP) = 2 K e e 6 , where K e is a positive calibration constant, e 1 and e 2 are the normal components of strain along perpendicular '1' and '2' directions, and e 6 = e 12 is the tensor shear strain. K e has been measured experimentally for GaAs and InP. In this paper, the results of a simple analytic determination of expressions for DOP as a function of strain are presented. Given the wide ranges reported for the strain deformation potentials b and d, it is not possible to give definitive and meaningful numerical values for expressions for DOP and K e. However, the sensitivity of DOP to strain suggests that it might be possible to design simple experiments to provide accurate values for the deformation potentials. The b and d deformation potentials might not be independent. For the results presented here and in the limit of isotropic material, an isotropic result for the DOP is found if d = √ 3 b.

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Section: Introductionmentioning

confidence: 99%

Degree of polarization of luminescence from GaAs and InP as a function of strain: a theoretical investigation

Cassidy

Landesman

2020

Appl. Opt.

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“…[7]. Laser emitters in regions of appreciable shear have been shown to emit less power than emitters in the center of the chip, where the shear strain is zero or small [13][14][15][16][17][18]. This reduction in power for emitters in regions of appreciable shear strain can be explained by birefringence owing to the presence of shear strain [7,[17][18][19].…”

Section: Introductionmentioning

confidence: 99%

“…Most previous work has been analysis of the DOP of PL or electroluminescence [13,17,[27][28][29][30][31][32][33][34]. CL offers better spatial resolution than PL.…”

Section: Introductionmentioning

confidence: 99%

Degree of Polarization of Cathodoluminescence from a (100) GaAs Substrate with SiN Stripes

Cassidy,

Pagnod-Rossiaux,

Mokhtari

2024

Optics

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Notes on fits of analytic estimations, 2D finite element method (FEM), and 3D FEM simulations to measurements of the cathodoluminescence (CL) and to the degree of polarization (DOP) of the CL from the top surface of a (100) GaAs substrate with a 6.22 μm wide SiN stripe are presented. Three interesting features are found in the DOP of CL data. Presumably these features are noticeable owing to the spatial resolution of the CL measurement system. Comparisons of both strain and spatial resolutions obtained by CL and photoluminescence (PL) systems are presented. The width of the central feature in the measured DOP is less than the width of the SiN, as measured from the CL. This suggests horizontal cracks or de-laminations into each side of the SiN of about 0.7 μm. In addition, it appears that deformed regions of widths of ≈1.5 μm and adjacent to the SiN must exist to explain some of the features.

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“…This understanding of the shear strain (ROP) in one coordinate system as the difference of the tensile components (DOP) in a rotated coordinate system provides an explanation of how the shear strain creates a birefringence at 45 deg. Hempel et al [11] analyzed packaginginduced strain using spectroscopic techniques. They concluded that for emitters near the ends of a bar there might be an additional effect, and this additional effect might be shear strain.…”

mentioning

confidence: 99%

High-power diode laser bars and shear strain

et al. 2013

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The emitters at the edges of high-power laser bars tend to produce less power than emitters that are near the center of the bar. We suggest that shear strain, which owes to strain induced by bonding, creates through a photoelastic effect a weak birefringence that rotates the plane of polarization of the light. A rotation of the plane of polarization reduces the net gain for the lasing modes and hence leads to a lower output power for the emitters at the edges of the bars, where the shear strain is dominant.

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Spectroscopic analysis of packaging concepts for high-power diode laser bars

Cited by 11 publications

References 14 publications

Degree of polarization of luminescence from GaAs and InP as a function of strain: a theoretical investigation

Degree of polarization of luminescence from GaAs and InP as a function of strain: a theoretical investigation

Degree of Polarization of Cathodoluminescence from a (100) GaAs Substrate with SiN Stripes

High-power diode laser bars and shear strain

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