“…The degree of polarization (DOP) of luminescence from III-V materials, such as GaAs and InP and their alloys, is a sensitive function of strain [1][2][3][4][5]. DOP measurements [6][7][8][9][10] have been applied to investigations of bonding strain [2,4,[11][12][13][14], to understanding spectral properties of lasers [15], to estimation of strain and photo-elastic effects owing to over-layers [16][17][18], to identify dislocations [3,5], to reliability investigations [19], to effects of strain on the operation and yield of DFB lasers [20,21], to growth related issues [22][23][24][25], and to characterize high power lasers [10,13,19,26].…”